Simulation study on radiation hardness for total ionizing dose effect of ultra-thin shielding layer 300 V SOI LDMOS

Zhang Shu-Hao; Yuan Zhang-Yi-An; Qiao Ming; Zhang Bo

doi:10.7498/aps.71.20220041

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Zhang Shu-Hao, Yuan Zhang-Yi-An, Qiao Ming, Zhang Bo. Simulation study on radiation hardness for total ionizing dose effect of ultra-thin shielding layer 300 V SOI LDMOSJ. Acta Physica Sinica, 2022, 71(10): 107301. DOI: 10.7498/aps.71.20220041

Citation:

Zhang Shu-Hao, Yuan Zhang-Yi-An, Qiao Ming, Zhang Bo. Simulation study on radiation hardness for total ionizing dose effect of ultra-thin shielding layer 300 V SOI LDMOSJ. Acta Physica Sinica, 2022, 71(10): 107301. DOI: 10.7498/aps.71.20220041

Citation:

Zhang Shu-Hao, Yuan Zhang-Yi-An, Qiao Ming, Zhang Bo. Simulation study on radiation hardness for total ionizing dose effect of ultra-thin shielding layer 300 V SOI LDMOSJ. Acta Physica Sinica, 2022, 71(10): 107301. DOI: 10.7498/aps.71.20220041