Effects of ultra-thin aluminium interlayer on Schottky barrier parameters of NiGe/n-type Ge Schottky barrier diode

Ding Hua-Jun; Xue Zhong-Ying; Wei Xing; Zhang Bo

doi:10.7498/aps.71.20220320

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Ding Hua-Jun, Xue Zhong-Ying, Wei Xing, Zhang Bo. Effects of ultra-thin aluminium interlayer on Schottky barrier parameters of NiGe/n-type Ge Schottky barrier diodeJ. Acta Physica Sinica, 2022, 71(20): 207302. DOI: 10.7498/aps.71.20220320

Citation:

Ding Hua-Jun, Xue Zhong-Ying, Wei Xing, Zhang Bo. Effects of ultra-thin aluminium interlayer on Schottky barrier parameters of NiGe/n-type Ge Schottky barrier diodeJ. Acta Physica Sinica, 2022, 71(20): 207302. DOI: 10.7498/aps.71.20220320

Citation:

Ding Hua-Jun, Xue Zhong-Ying, Wei Xing, Zhang Bo. Effects of ultra-thin aluminium interlayer on Schottky barrier parameters of NiGe/n-type Ge Schottky barrier diodeJ. Acta Physica Sinica, 2022, 71(20): 207302. DOI: 10.7498/aps.71.20220320