Effect of inserted AlxGa1–xN layer on characteristic of double-channel n-Al0.3Ga0.7N/GaN/i-AlxGa1–xN/GaN HEMT

Cai Jing; Yao Ruo-He; Geng Kui-Wei

doi:10.7498/aps.71.20220403

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Cai Jing, Yao Ruo-He, Geng Kui-Wei. Effect of inserted AlxGa1–xN layer on characteristic of double-channel n-Al0.3Ga0.7N/GaN/i-AlxGa1–xN/GaN HEMTJ. Acta Physica Sinica, 2022, 71(16): 167301. DOI: 10.7498/aps.71.20220403

Citation:

Cai Jing, Yao Ruo-He, Geng Kui-Wei. Effect of inserted AlxGa1–xN layer on characteristic of double-channel n-Al0.3Ga0.7N/GaN/i-AlxGa1–xN/GaN HEMTJ. Acta Physica Sinica, 2022, 71(16): 167301. DOI: 10.7498/aps.71.20220403

Citation:

Cai Jing, Yao Ruo-He, Geng Kui-Wei. Effect of inserted AlxGa1–xN layer on characteristic of double-channel n-Al0.3Ga0.7N/GaN/i-AlxGa1–xN/GaN HEMTJ. Acta Physica Sinica, 2022, 71(16): 167301. DOI: 10.7498/aps.71.20220403