Damage mechanism of SiC Schottky barrier diode irradiated by heavy ions

Peng Chao; Lei Zhi-Feng; Zhang Zhan-Gang; He Yu-Juan; Chen Yi-Qiang; Lu Guo-Guang; Huang Yun

doi:10.7498/aps.71.20220628

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Peng Chao, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Chen Yi-Qiang, Lu Guo-Guang, Huang Yun. Damage mechanism of SiC Schottky barrier diode irradiated by heavy ionsJ. Acta Physica Sinica, 2022, 71(17): 176101. DOI: 10.7498/aps.71.20220628

Citation:

Peng Chao, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Chen Yi-Qiang, Lu Guo-Guang, Huang Yun. Damage mechanism of SiC Schottky barrier diode irradiated by heavy ionsJ. Acta Physica Sinica, 2022, 71(17): 176101. DOI: 10.7498/aps.71.20220628

Citation:

Peng Chao, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Chen Yi-Qiang, Lu Guo-Guang, Huang Yun. Damage mechanism of SiC Schottky barrier diode irradiated by heavy ionsJ. Acta Physica Sinica, 2022, 71(17): 176101. DOI: 10.7498/aps.71.20220628