A Ge-based dual channel rectified single ended Schottky barrier field effect transistor for 2.45 GHz microwave wireless energy transmission

Bi Si-Han; Song Jian-Jun; Zhang Dong; Zhang Shi-Qi

doi:10.7498/aps.71.20220855

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Bi Si-Han, Song Jian-Jun, Zhang Dong, Zhang Shi-Qi. A Ge-based dual channel rectified single ended Schottky barrier field effect transistor for 2.45 GHz microwave wireless energy transmissionJ. Acta Physica Sinica, 2022, 71(20): 208401. DOI: 10.7498/aps.71.20220855

Citation:

Bi Si-Han, Song Jian-Jun, Zhang Dong, Zhang Shi-Qi. A Ge-based dual channel rectified single ended Schottky barrier field effect transistor for 2.45 GHz microwave wireless energy transmissionJ. Acta Physica Sinica, 2022, 71(20): 208401. DOI: 10.7498/aps.71.20220855

Citation:

Bi Si-Han, Song Jian-Jun, Zhang Dong, Zhang Shi-Qi. A Ge-based dual channel rectified single ended Schottky barrier field effect transistor for 2.45 GHz microwave wireless energy transmissionJ. Acta Physica Sinica, 2022, 71(20): 208401. DOI: 10.7498/aps.71.20220855