High endurance organic resistive switching memory based on 1, 2-dicyanobenzene and polymer composites

Li Wei; Zhu Hui-Wen; Sun Tong; Qu Wen-Shan; Li Jian-Gang; Yang Hui; Gao Zhi-Xiang; Shi Wei; Wei Bin; Wang Hua

doi:10.7498/aps.72.20221507

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Li Wei, Zhu Hui-Wen, Sun Tong, Qu Wen-Shan, Li Jian-Gang, Yang Hui, Gao Zhi-Xiang, Shi Wei, Wei Bin, Wang Hua. High endurance organic resistive switching memory based on 1, 2-dicyanobenzene and polymer compositesJ. Acta Physica Sinica, 2023, 72(4): 048501. DOI: 10.7498/aps.72.20221507

Citation:

Li Wei, Zhu Hui-Wen, Sun Tong, Qu Wen-Shan, Li Jian-Gang, Yang Hui, Gao Zhi-Xiang, Shi Wei, Wei Bin, Wang Hua. High endurance organic resistive switching memory based on 1, 2-dicyanobenzene and polymer compositesJ. Acta Physica Sinica, 2023, 72(4): 048501. DOI: 10.7498/aps.72.20221507

Citation:

Li Wei, Zhu Hui-Wen, Sun Tong, Qu Wen-Shan, Li Jian-Gang, Yang Hui, Gao Zhi-Xiang, Shi Wei, Wei Bin, Wang Hua. High endurance organic resistive switching memory based on 1, 2-dicyanobenzene and polymer compositesJ. Acta Physica Sinica, 2023, 72(4): 048501. DOI: 10.7498/aps.72.20221507