Effect of passivation layer on back channel etching InGaZnO thin film transistors

Wang Chen; Wen Pan; Peng Cong; Xu Meng; Chen Long-Long; Li Xi-Feng; Zhang Jian-Hua

doi:10.7498/aps.72.20222272

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Wang Chen, Wen Pan, Peng Cong, Xu Meng, Chen Long-Long, Li Xi-Feng, Zhang Jian-Hua. Effect of passivation layer on back channel etching InGaZnO thin film transistorsJ. Acta Physica Sinica, 2023, 72(8): 087302. DOI: 10.7498/aps.72.20222272

Citation:

Wang Chen, Wen Pan, Peng Cong, Xu Meng, Chen Long-Long, Li Xi-Feng, Zhang Jian-Hua. Effect of passivation layer on back channel etching InGaZnO thin film transistorsJ. Acta Physica Sinica, 2023, 72(8): 087302. DOI: 10.7498/aps.72.20222272

Citation:

Wang Chen, Wen Pan, Peng Cong, Xu Meng, Chen Long-Long, Li Xi-Feng, Zhang Jian-Hua. Effect of passivation layer on back channel etching InGaZnO thin film transistorsJ. Acta Physica Sinica, 2023, 72(8): 087302. DOI: 10.7498/aps.72.20222272