Interface-state suppression of AlGaN/GaN Schottky barrier diodes with post-anode-annealing treatment

Wu Peng; Li Ruo-Han; Zhang Tao; Zhang Jin-Cheng; Hao Yue

doi:10.7498/aps.72.20230553

Search

x

Wu Peng, Li Ruo-Han, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Interface-state suppression of AlGaN/GaN Schottky barrier diodes with post-anode-annealing treatmentJ. Acta Physica Sinica, 2023, 72(19): 198501. DOI: 10.7498/aps.72.20230553

Citation:

Wu Peng, Li Ruo-Han, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Interface-state suppression of AlGaN/GaN Schottky barrier diodes with post-anode-annealing treatmentJ. Acta Physica Sinica, 2023, 72(19): 198501. DOI: 10.7498/aps.72.20230553

Citation:

Wu Peng, Li Ruo-Han, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Interface-state suppression of AlGaN/GaN Schottky barrier diodes with post-anode-annealing treatmentJ. Acta Physica Sinica, 2023, 72(19): 198501. DOI: 10.7498/aps.72.20230553