Analysis of thermal noise characteristics in 10 nm metal oxide semiconductor field effect transistor

Jia Xiao-Fei; Wei Qun; Zhang Wen-Peng; He Liang; Wu Zhen-Hua

doi:10.7498/aps.72.20230661

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Jia Xiao-Fei, Wei Qun, Zhang Wen-Peng, He Liang, Wu Zhen-Hua. Analysis of thermal noise characteristics in 10 nm metal oxide semiconductor field effect transistorJ. Acta Physica Sinica, 2023, 72(22): 227303. DOI: 10.7498/aps.72.20230661

Citation:

Jia Xiao-Fei, Wei Qun, Zhang Wen-Peng, He Liang, Wu Zhen-Hua. Analysis of thermal noise characteristics in 10 nm metal oxide semiconductor field effect transistorJ. Acta Physica Sinica, 2023, 72(22): 227303. DOI: 10.7498/aps.72.20230661

Citation:

Jia Xiao-Fei, Wei Qun, Zhang Wen-Peng, He Liang, Wu Zhen-Hua. Analysis of thermal noise characteristics in 10 nm metal oxide semiconductor field effect transistorJ. Acta Physica Sinica, 2023, 72(22): 227303. DOI: 10.7498/aps.72.20230661