Resistive switching characteristics of HfO<sub><i>x</i></sub>-based resistance random access memory under photoelectric synergistic regulation

Wang Ying; Huang Hui-Xiang; Huang Xiang-Lin; Guo Ting-Ting

doi:10.7498/aps.72.20230797

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Wang Ying, Huang Hui-Xiang, Huang Xiang-Lin, Guo Ting-Ting. Resistive switching characteristics of HfOx-based resistance random access memory under photoelectric synergistic regulationJ. Acta Physica Sinica, 2023, 72(19): 197201. DOI: 10.7498/aps.72.20230797

Citation:

Wang Ying, Huang Hui-Xiang, Huang Xiang-Lin, Guo Ting-Ting. Resistive switching characteristics of HfOx-based resistance random access memory under photoelectric synergistic regulationJ. Acta Physica Sinica, 2023, 72(19): 197201. DOI: 10.7498/aps.72.20230797

Citation:

Wang Ying, Huang Hui-Xiang, Huang Xiang-Lin, Guo Ting-Ting. Resistive switching characteristics of HfOx-based resistance random access memory under photoelectric synergistic regulationJ. Acta Physica Sinica, 2023, 72(19): 197201. DOI: 10.7498/aps.72.20230797