Rate optimization of atomic layer etching process of silicon

Bai Sheng-Bo; Chen Zhi-Hua; Zhang Huan-Hao; Chen Gao-Jie; Cao Shi-Cheng; Zhang Sheng-Bo

doi:10.7498/aps.72.20231022

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Bai Sheng-Bo, Chen Zhi-Hua, Zhang Huan-Hao, Chen Gao-Jie, Cao Shi-Cheng, Zhang Sheng-Bo. Rate optimization of atomic layer etching process of siliconJ. Acta Physica Sinica, 2023, 72(21): 215214. DOI: 10.7498/aps.72.20231022

Citation:

Bai Sheng-Bo, Chen Zhi-Hua, Zhang Huan-Hao, Chen Gao-Jie, Cao Shi-Cheng, Zhang Sheng-Bo. Rate optimization of atomic layer etching process of siliconJ. Acta Physica Sinica, 2023, 72(21): 215214. DOI: 10.7498/aps.72.20231022

Citation:

Bai Sheng-Bo, Chen Zhi-Hua, Zhang Huan-Hao, Chen Gao-Jie, Cao Shi-Cheng, Zhang Sheng-Bo. Rate optimization of atomic layer etching process of siliconJ. Acta Physica Sinica, 2023, 72(21): 215214. DOI: 10.7498/aps.72.20231022