Investigation of electronic structure and optoelectronic properties of Si-doped β-Ga2O3 using GGA+U method based on first-principle

Zhang Ying-Nan; Zhang Min; Zhang Pai; Hu Wen-Bo

doi:10.7498/aps.73.20231147

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Zhang Ying-Nan, Zhang Min, Zhang Pai, Hu Wen-Bo. Investigation of electronic structure and optoelectronic properties of Si-doped β-Ga2O3 using GGA+U method based on first-principleJ. Acta Physica Sinica, 2024, 73(1): 017102. DOI: 10.7498/aps.73.20231147

Citation:

Zhang Ying-Nan, Zhang Min, Zhang Pai, Hu Wen-Bo. Investigation of electronic structure and optoelectronic properties of Si-doped β-Ga2O3 using GGA+U method based on first-principleJ. Acta Physica Sinica, 2024, 73(1): 017102. DOI: 10.7498/aps.73.20231147

Citation:

Zhang Ying-Nan, Zhang Min, Zhang Pai, Hu Wen-Bo. Investigation of electronic structure and optoelectronic properties of Si-doped β-Ga2O3 using GGA+U method based on first-principleJ. Acta Physica Sinica, 2024, 73(1): 017102. DOI: 10.7498/aps.73.20231147