Band structure of high O/Ga ratio a-GaO<sub><i>x</i></sub> and its electron transport mechanism at metal-semiconductor interface

TIAN Kun; KONG Le; DENG Jinxiang; ZHANG Qing; MENG Xue; WU Rui; XU Jiawei; LIU Weiman; YANG Xiaolei

doi:10.7498/aps.74.20241571

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TIAN Kun, KONG Le, DENG Jinxiang, ZHANG Qing, MENG Xue, WU Rui, XU Jiawei, LIU Weiman, YANG Xiaolei. Band structure of high O/Ga ratio a-GaOx and its electron transport mechanism at metal-semiconductor interfaceJ. Acta Physica Sinica, 2025, 74(13): 137103. DOI: 10.7498/aps.74.20241571

Citation:

TIAN Kun, KONG Le, DENG Jinxiang, ZHANG Qing, MENG Xue, WU Rui, XU Jiawei, LIU Weiman, YANG Xiaolei. Band structure of high O/Ga ratio a-GaOx and its electron transport mechanism at metal-semiconductor interfaceJ. Acta Physica Sinica, 2025, 74(13): 137103. DOI: 10.7498/aps.74.20241571

Citation:

TIAN Kun, KONG Le, DENG Jinxiang, ZHANG Qing, MENG Xue, WU Rui, XU Jiawei, LIU Weiman, YANG Xiaolei. Band structure of high O/Ga ratio a-GaOx and its electron transport mechanism at metal-semiconductor interfaceJ. Acta Physica Sinica, 2025, 74(13): 137103. DOI: 10.7498/aps.74.20241571