Demonstration of ultra-thin high-<i>k</i> LaLuO<sub>3</sub> gate dielectric for Ge-CMOS manufacture in More Moore application

TANG Xiaoyu; LIU Yujie; HUA Tao

doi:10.7498/aps.74.20250126

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TANG Xiaoyu, LIU Yujie, HUA Tao. Demonstration of ultra-thin high-k LaLuO3 gate dielectric for Ge-CMOS manufacture in More Moore applicationJ. Acta Physica Sinica, 2025, 74(9): 096801. DOI: 10.7498/aps.74.20250126

Citation:

TANG Xiaoyu, LIU Yujie, HUA Tao. Demonstration of ultra-thin high-k LaLuO3 gate dielectric for Ge-CMOS manufacture in More Moore applicationJ. Acta Physica Sinica, 2025, 74(9): 096801. DOI: 10.7498/aps.74.20250126

Citation:

TANG Xiaoyu, LIU Yujie, HUA Tao. Demonstration of ultra-thin high-k LaLuO3 gate dielectric for Ge-CMOS manufacture in More Moore applicationJ. Acta Physica Sinica, 2025, 74(9): 096801. DOI: 10.7498/aps.74.20250126