Research progress of single event effect and reinforcement technology of SiC power metal-oxide-semiconductor field-effect transistors

QIU Yiwu; LIANG Di; YIN Yanan; DONG Lei; WANG Tao; ZHOU Xinjie

doi:10.7498/aps.74.20250273

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QIU Yiwu, LIANG Di, YIN Yanan, DONG Lei, WANG Tao, ZHOU Xinjie. Research progress of single event effect and reinforcement technology of SiC power metal-oxide-semiconductor field-effect transistorsJ. Acta Physica Sinica, 2025, 74(13): 136103. DOI: 10.7498/aps.74.20250273

Citation:

QIU Yiwu, LIANG Di, YIN Yanan, DONG Lei, WANG Tao, ZHOU Xinjie. Research progress of single event effect and reinforcement technology of SiC power metal-oxide-semiconductor field-effect transistorsJ. Acta Physica Sinica, 2025, 74(13): 136103. DOI: 10.7498/aps.74.20250273

Citation:

QIU Yiwu, LIANG Di, YIN Yanan, DONG Lei, WANG Tao, ZHOU Xinjie. Research progress of single event effect and reinforcement technology of SiC power metal-oxide-semiconductor field-effect transistorsJ. Acta Physica Sinica, 2025, 74(13): 136103. DOI: 10.7498/aps.74.20250273