CHEN Meijuan, GUO Jiaxin, WU Hao, ZHENG Xiaoran, MIN Nan, TIAN Hui, LI Quanjun, DU Shiyu, SHEN Longhai. First-principles study of structure, elasticity, and electronic properties of ternary semiconductor Al4In2N6 under high pressureJ. Acta Physica Sinica, 2025, 74(17): 177102. DOI: 10.7498/aps.74.20250287
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Citation:
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CHEN Meijuan, GUO Jiaxin, WU Hao, ZHENG Xiaoran, MIN Nan, TIAN Hui, LI Quanjun, DU Shiyu, SHEN Longhai. First-principles study of structure, elasticity, and electronic properties of ternary semiconductor Al4In2N6 under high pressureJ. Acta Physica Sinica, 2025, 74(17): 177102. DOI: 10.7498/aps.74.20250287
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CHEN Meijuan, GUO Jiaxin, WU Hao, ZHENG Xiaoran, MIN Nan, TIAN Hui, LI Quanjun, DU Shiyu, SHEN Longhai. First-principles study of structure, elasticity, and electronic properties of ternary semiconductor Al4In2N6 under high pressureJ. Acta Physica Sinica, 2025, 74(17): 177102. DOI: 10.7498/aps.74.20250287
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Citation:
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CHEN Meijuan, GUO Jiaxin, WU Hao, ZHENG Xiaoran, MIN Nan, TIAN Hui, LI Quanjun, DU Shiyu, SHEN Longhai. First-principles study of structure, elasticity, and electronic properties of ternary semiconductor Al4In2N6 under high pressureJ. Acta Physica Sinica, 2025, 74(17): 177102. DOI: 10.7498/aps.74.20250287
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