GaN-based lateral diode with nanocrystalline diamond passivation layer

REN Zeyang; SONG Songyuan; ZHANG Tao; CHEN Heyuan; LI Yao; ZHANG Jinfeng; LI Junpeng; CHEN Junfei; ZHU Weidong; HAO Yue; ZHANG Jincheng

doi:10.7498/aps.74.20250523

Search

x

REN Zeyang, SONG Songyuan, ZHANG Tao, CHEN Heyuan, LI Yao, ZHANG Jinfeng, LI Junpeng, CHEN Junfei, ZHU Weidong, HAO Yue, ZHANG Jincheng. GaN-based lateral diode with nanocrystalline diamond passivation layerJ. Acta Physica Sinica, 2025, 74(19): 198101. DOI: 10.7498/aps.74.20250523

Citation:

REN Zeyang, SONG Songyuan, ZHANG Tao, CHEN Heyuan, LI Yao, ZHANG Jinfeng, LI Junpeng, CHEN Junfei, ZHU Weidong, HAO Yue, ZHANG Jincheng. GaN-based lateral diode with nanocrystalline diamond passivation layerJ. Acta Physica Sinica, 2025, 74(19): 198101. DOI: 10.7498/aps.74.20250523

Citation:

REN Zeyang, SONG Songyuan, ZHANG Tao, CHEN Heyuan, LI Yao, ZHANG Jinfeng, LI Junpeng, CHEN Junfei, ZHU Weidong, HAO Yue, ZHANG Jincheng. GaN-based lateral diode with nanocrystalline diamond passivation layerJ. Acta Physica Sinica, 2025, 74(19): 198101. DOI: 10.7498/aps.74.20250523