Effects of crystal rotation on 6-inch SiC crystal growth by top-seeded solution growth method

YANG Yao; LI Zaoyang; GAO Junhao; QI Chongchong; LI Dengnian; WU Guanghui; LIU Lijun

doi:10.7498/aps.74.20250595

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YANG Yao, LI Zaoyang, GAO Junhao, QI Chongchong, LI Dengnian, WU Guanghui, LIU Lijun. Effects of crystal rotation on 6-inch SiC crystal growth by top-seeded solution growth methodJ. Acta Physica Sinica, 2025, 74(15): 158101. DOI: 10.7498/aps.74.20250595

Citation:

YANG Yao, LI Zaoyang, GAO Junhao, QI Chongchong, LI Dengnian, WU Guanghui, LIU Lijun. Effects of crystal rotation on 6-inch SiC crystal growth by top-seeded solution growth methodJ. Acta Physica Sinica, 2025, 74(15): 158101. DOI: 10.7498/aps.74.20250595

Citation:

YANG Yao, LI Zaoyang, GAO Junhao, QI Chongchong, LI Dengnian, WU Guanghui, LIU Lijun. Effects of crystal rotation on 6-inch SiC crystal growth by top-seeded solution growth methodJ. Acta Physica Sinica, 2025, 74(15): 158101. DOI: 10.7498/aps.74.20250595