Quasi vertical GaN Schottky diode on self-supporting substrate with low reverse leakage and high switching ratio

LU Bowen; XU Shengrui; HUANG Yong; SU Huake; TAO Hongchang; XIE Lei; DING Xiaolong; RONG Xiaoran; LIU Shaoke; JIA Jingyu; ZHANG Jincheng; HAO Yue

doi:10.7498/aps.74.20250610

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LU Bowen, XU Shengrui, HUANG Yong, SU Huake, TAO Hongchang, XIE Lei, DING Xiaolong, RONG Xiaoran, LIU Shaoke, JIA Jingyu, ZHANG Jincheng, HAO Yue. Quasi vertical GaN Schottky diode on self-supporting substrate with low reverse leakage and high switching ratioJ. Acta Physica Sinica, 2025, 74(19): 194202. DOI: 10.7498/aps.74.20250610

Citation:

LU Bowen, XU Shengrui, HUANG Yong, SU Huake, TAO Hongchang, XIE Lei, DING Xiaolong, RONG Xiaoran, LIU Shaoke, JIA Jingyu, ZHANG Jincheng, HAO Yue. Quasi vertical GaN Schottky diode on self-supporting substrate with low reverse leakage and high switching ratioJ. Acta Physica Sinica, 2025, 74(19): 194202. DOI: 10.7498/aps.74.20250610

Citation:

LU Bowen, XU Shengrui, HUANG Yong, SU Huake, TAO Hongchang, XIE Lei, DING Xiaolong, RONG Xiaoran, LIU Shaoke, JIA Jingyu, ZHANG Jincheng, HAO Yue. Quasi vertical GaN Schottky diode on self-supporting substrate with low reverse leakage and high switching ratioJ. Acta Physica Sinica, 2025, 74(19): 194202. DOI: 10.7498/aps.74.20250610