Stability of HfO<sub><i>x</i></sub> memristors based on oxygen vacancy regulation

ZHU Yuanyuan; YANG Ziyi; YANG Shuning; ZHANG Yunfei; ZHANG Miao; WANG Xin; WANG Hongjun; XU Jing

doi:10.7498/aps.74.20250971

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ZHU Yuanyuan, YANG Ziyi, YANG Shuning, ZHANG Yunfei, ZHANG Miao, WANG Xin, WANG Hongjun, XU Jing. Stability of HfOx memristors based on oxygen vacancy regulationJ. Acta Physica Sinica, 2025, 74(21): 217301. DOI: 10.7498/aps.74.20250971

Citation:

ZHU Yuanyuan, YANG Ziyi, YANG Shuning, ZHANG Yunfei, ZHANG Miao, WANG Xin, WANG Hongjun, XU Jing. Stability of HfOx memristors based on oxygen vacancy regulationJ. Acta Physica Sinica, 2025, 74(21): 217301. DOI: 10.7498/aps.74.20250971

Citation:

ZHU Yuanyuan, YANG Ziyi, YANG Shuning, ZHANG Yunfei, ZHANG Miao, WANG Xin, WANG Hongjun, XU Jing. Stability of HfOx memristors based on oxygen vacancy regulationJ. Acta Physica Sinica, 2025, 74(21): 217301. DOI: 10.7498/aps.74.20250971