Thickness effect of interface potential barrier and charge tunneling probability in WS<sub>2</sub>/h-BN/MoS<sub>2</sub> heterostructures

TAN Xin; CHEN Yongjie; LI Jing; DONG Jiansheng; TAN Jianing

doi:10.7498/aps.75.20251417

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中国物理学会期刊

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TAN Xin, CHEN Yongjie, LI Jing, DONG Jiansheng, TAN Jianing. Thickness effect of interface potential barrier and charge tunneling probability in WS2/h-BN/MoS2 heterostructuresJ. Acta Physica Sinica, 2026, 75(6): 060713. DOI: 10.7498/aps.75.20251417

Citation:

TAN Xin, CHEN Yongjie, LI Jing, DONG Jiansheng, TAN Jianing. Thickness effect of interface potential barrier and charge tunneling probability in WS2/h-BN/MoS2 heterostructuresJ. Acta Physica Sinica, 2026, 75(6): 060713. DOI: 10.7498/aps.75.20251417

Citation:

TAN Xin, CHEN Yongjie, LI Jing, DONG Jiansheng, TAN Jianing. Thickness effect of interface potential barrier and charge tunneling probability in WS2/h-BN/MoS2 heterostructuresJ. Acta Physica Sinica, 2026, 75(6): 060713. DOI: 10.7498/aps.75.20251417