Mechanism of GaN high electron mobility transistor interface engineering in enhancing high-temperature and dynamic bias reliability

WAN Ziyan; ZHANG Haoran; LI Xiao; NING Jing; HAO Yue; ZHANG Jincheng

doi:10.7498/aps.75.20251629

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WAN Ziyan, ZHANG Haoran, LI Xiao, NING Jing, HAO Yue, ZHANG Jincheng. Mechanism of GaN high electron mobility transistor interface engineering in enhancing high-temperature and dynamic bias reliabilityJ. Acta Physica Sinica, 2026, 75(8): 080708. DOI: 10.7498/aps.75.20251629

Citation:

WAN Ziyan, ZHANG Haoran, LI Xiao, NING Jing, HAO Yue, ZHANG Jincheng. Mechanism of GaN high electron mobility transistor interface engineering in enhancing high-temperature and dynamic bias reliabilityJ. Acta Physica Sinica, 2026, 75(8): 080708. DOI: 10.7498/aps.75.20251629

Citation:

WAN Ziyan, ZHANG Haoran, LI Xiao, NING Jing, HAO Yue, ZHANG Jincheng. Mechanism of GaN high electron mobility transistor interface engineering in enhancing high-temperature and dynamic bias reliabilityJ. Acta Physica Sinica, 2026, 75(8): 080708. DOI: 10.7498/aps.75.20251629