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中国物理学会期刊
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MO Qiuqi, ZHAO Changzhe, ZHENG Li, LI Zhongliang. Application of X-ray topography in defect characterization of 4H-SiC waferJ. Acta Physica Sinica, 2026, 75(10): 100808. DOI: 10.7498/aps.75.20260007
Citation: MO Qiuqi, ZHAO Changzhe, ZHENG Li, LI Zhongliang. Application of X-ray topography in defect characterization of 4H-SiC waferJ. Acta Physica Sinica, 2026, 75(10): 100808. DOI: 10.7498/aps.75.20260007
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Application of X-ray topography in defect characterization of 4H-SiC wafer

Acta Phys. Sin., 2026, 75(10): 100808.
DOI: 10.7498/aps.75.20260007
CSTR: 32037.14.aps.75.20260007
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