Solid source molecular beam epitaxy growth and physical properties of low-temperature-grown Fe-doped InGaAs films for terahertz photoconductive antennas

YIN Yukun; YANG Wenlong; HOU Xiyu; SHI Haiyan; LI Donghai; ZHANG Zitong; PAN Dong

doi:10.7498/aps.75.20260014

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YIN Yukun, YANG Wenlong, HOU Xiyu, SHI Haiyan, LI Donghai, ZHANG Zitong, PAN Dong. Solid source molecular beam epitaxy growth and physical properties of low-temperature-grown Fe-doped InGaAs films for terahertz photoconductive antennasJ. Acta Physica Sinica, 2026, 75(9): 090804. DOI: 10.7498/aps.75.20260014

Citation:

YIN Yukun, YANG Wenlong, HOU Xiyu, SHI Haiyan, LI Donghai, ZHANG Zitong, PAN Dong. Solid source molecular beam epitaxy growth and physical properties of low-temperature-grown Fe-doped InGaAs films for terahertz photoconductive antennasJ. Acta Physica Sinica, 2026, 75(9): 090804. DOI: 10.7498/aps.75.20260014

Citation:

YIN Yukun, YANG Wenlong, HOU Xiyu, SHI Haiyan, LI Donghai, ZHANG Zitong, PAN Dong. Solid source molecular beam epitaxy growth and physical properties of low-temperature-grown Fe-doped InGaAs films for terahertz photoconductive antennasJ. Acta Physica Sinica, 2026, 75(9): 090804. DOI: 10.7498/aps.75.20260014