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中国物理学会期刊
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LUO Man, LUO Shijun, WANG Yibin, JIAO Wenbo, ZHANG Qiang, XU Jintong, LONG Mingsheng, YU Chenhui. Modulation mechanisms of capacitance-voltage characteristics by interface defect states in Al2O3/Y2O3/In0.53Ga0.47As MOS structures. Acta Physica Sinica, 2026, 75(17): 170701. DOI: 10.7498/aps.75.20260366
Citation: LUO Man, LUO Shijun, WANG Yibin, JIAO Wenbo, ZHANG Qiang, XU Jintong, LONG Mingsheng, YU Chenhui. Modulation mechanisms of capacitance-voltage characteristics by interface defect states in Al2O3/Y2O3/In0.53Ga0.47As MOS structures. Acta Physica Sinica, 2026, 75(17): 170701. DOI: 10.7498/aps.75.20260366
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Modulation mechanisms of capacitance-voltage characteristics by interface defect states in Al2O3/Y2O3/In0.53Ga0.47As MOS structures

Acta Phys. Sin., 2026, 75(17): 170701.
DOI: 10.7498/aps.75.20260366
CSTR: 32037.14.aps.75.20260366
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