Strain engineering in MoS<sub>2</sub> transistors via topography modulation of the gate dielectric

MIN Yufeng; FANG Haotian; SUN Dongdong; WANG Ke; GE Yu; WEI Lizi; SHI Yuanyuan

doi:10.7498/aps.75.20260406

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MIN Yufeng, FANG Haotian, SUN Dongdong, WANG Ke, GE Yu, WEI Lizi, SHI Yuanyuan. Strain engineering in MoS2 transistors via topography modulation of the gate dielectric. Acta Physica Sinica, 2026, 75(17): 170801. DOI: 10.7498/aps.75.20260406

Citation:

MIN Yufeng, FANG Haotian, SUN Dongdong, WANG Ke, GE Yu, WEI Lizi, SHI Yuanyuan. Strain engineering in MoS2 transistors via topography modulation of the gate dielectric. Acta Physica Sinica, 2026, 75(17): 170801. DOI: 10.7498/aps.75.20260406

Citation:

MIN Yufeng, FANG Haotian, SUN Dongdong, WANG Ke, GE Yu, WEI Lizi, SHI Yuanyuan. Strain engineering in MoS2 transistors via topography modulation of the gate dielectric. Acta Physica Sinica, 2026, 75(17): 170801. DOI: 10.7498/aps.75.20260406