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Xie Tian-Ci, Zhang Bin, He Bo, Li Hao-Peng, Qin Zhuang, Qian Jin-Qian, Shi Qie-Ming, Lewis Elfed, Sun Wei-Min. Mathematical algorithm model of absolute dose in radiotherapy. Acta Physica Sinica,
2021, 70(1): 018701.
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Yang Liang, Wei Cheng-Yang, Lei Li-Ming, Li Zhen-Xi, Li Sai-Yi. Monte Carlo simulations of microstructure and texture evolution during annealing of a two-phase titanium alloy. Acta Physica Sinica,
2013, 62(18): 186103.
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Shi Gao-Ming, Zou Zhi-Qiang, Sun Li-Min, Li Wei-Cong, Liu Xiao-Yong. Scanning tunneling mircroscopy and X-ray photoelectron spectroscopy studies of MnSi film and MnSi1.7 nanowires grown on Si substrates. Acta Physica Sinica,
2012, 61(22): 227301.
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Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong. An model of tunneling gate current for uniaxially strained Si nMOSFET. Acta Physica Sinica,
2011, 60(9): 097302.
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Tang Zheng-Xia, Shen Hong-Lie, Jiang Feng, Fang Ru, Lu Lin-Feng, Huang Hai-Bin, Cai Hong. Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile. Acta Physica Sinica,
2010, 59(12): 8770-8775.
doi: 10.7498/aps.59.8770
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Zhang Fei-Peng, Lu Qing-Mei, Zhang Jiu-Xing, Zhang Xin. Texture and electrical transport properties of Ba and Ag double substituted BaxAgyCa3-x-yCo4O9 oxide. Acta Physica Sinica,
2009, 58(4): 2697-2701.
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Li Qi, Zhang Bo, Li Zhao-Ji. A new analytical model of breakdown voltage for the SD LDMOS. Acta Physica Sinica,
2008, 57(3): 1891-1896.
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Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica,
2007, 56(6): 3504-3508.
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Yang Ji-Jun, Xu Ke-Wei. Surface dynamic evolution of Ta film growth in the initial stage. Acta Physica Sinica,
2007, 56(10): 6023-6027.
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Yang Bai, Shen Bao-Gen, Zhao Tong-Yun, Sun Ji-Rong. Texture and magnetic properties of nanocomposite Pr2Fe14B/α-Fe melt-spun ribbons. Acta Physica Sinica,
2007, 56(6): 3527-3532.
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Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng. Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias. Acta Physica Sinica,
2006, 55(7): 3622-3628.
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Zhou Nai-Gen, Zhou Lang, Du Dan-Xu. Structure and formation of misfit dislocations in an epitaxial fcc film. Acta Physica Sinica,
2006, 55(1): 372-377.
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Shen Zi-Cai, Shao Jian-Da, Wang Ying-Jian, Fan Zheng-Xiu. Modeling analysis of gradient-index coatings prepared by reactive magnetron sputtering. Acta Physica Sinica,
2005, 54(10): 4842-4845.
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Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua. A physical-based percolation model for gate oxide TDDB. Acta Physica Sinica,
2003, 52(8): 2046-2051.
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Zhang Jian-Min, Xu Ke-Wei. Investigation of abnormal grain growth andtexture change in Ag and Cu films. Acta Physica Sinica,
2003, 52(1): 145-149.
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Wang Pei-Lin, Ding Tian-Hua, Cai Xun. . Acta Physica Sinica,
2002, 51(9): 2109-2112.
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Zhang Jian-Min, Xu Ke-Wei. . Acta Physica Sinica,
2002, 51(11): 2562-2566.
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Li Ming-Hua, Yu Guang-Hua, He Ge, Zhu Feng-Wu, Lai Wu-Yan. . Acta Physica Sinica,
2002, 51(12): 2854-2857.
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WU FENG-MIN, SHI JIAN-QING, WU ZI-QIN. SIMULATION OF THE INITIAL GROWTH OF METAL THIN FILMS AT HIGH TEMPERATURE. Acta Physica Sinica,
2001, 50(8): 1555-1559.
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LI CAN-HUA, LIAO YUAN, CHANG CHAO, WANG GUAN-ZHONG, FANG RONG-CHUAN. THE NUCLEATION AND GROWTH OF (100) TEXTURED DIAMOND FILMS IN PRESENCE OF NITROG EN. Acta Physica Sinica,
2000, 49(9): 1756-1763.
doi: 10.7498/aps.49.1756
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