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Zheng Ming, Yang Jian, Zhang Yi-Xiao, Guan Peng-Fei, Cheng Ao, Fan He-Liang. Energy storage and photoluminescence properties of Sm3+-doped 0.94Bi0.5Na0.5TiO3-0.06BaTiO3 multifunctional ceramics. Acta Physica Sinica,
2023, 72(17): 177801.
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Li Chuan-Gang, Ju Tao, Zhang Li-Guo, Li Yang, Zhang Xuan, Qin Juan, Zhang Bao-Shun, Zhang Ze-Hong. Growth of 4H-SiC recombination-enhancing buffer layer with Ti and N co-doping and improvement of forward voltage stability of PiN diodes. Acta Physica Sinica,
2021, 70(3): 037102.
doi: 10.7498/aps.70.20200921
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Fan Zhi-Dong, Zhou Zi-Chun, Liu Chuo, Ma Lei, Peng Ying-Cai. Photoluminescence properties of Eu doped Si nanowires. Acta Physica Sinica,
2015, 64(14): 148103.
doi: 10.7498/aps.64.148103
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Zhou Xiao-Hong, Yang Qing, Zou Jun-Tao, Liang Shu-Hua. Effects of growth conditions on the microstructures and photoluminescence properties of Ga-doped ZnO films. Acta Physica Sinica,
2015, 64(8): 087803.
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Qin Yu-Xiang, Liu Mei, Hua De-Yan. First-principles study of the electronic structure and NO2-sensing properties of Ti-doped W18O49 nanowire. Acta Physica Sinica,
2014, 63(20): 207101.
doi: 10.7498/aps.63.207101
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Liu Zhi, Li Ya-Ming, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate. Acta Physica Sinica,
2013, 62(7): 076108.
doi: 10.7498/aps.62.076108
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Linghu Jia-Jun, Liang Gong-Ying. First-principles study on the luminescence property of In-doped ZnTe. Acta Physica Sinica,
2013, 62(10): 103102.
doi: 10.7498/aps.62.103102
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Gao Yang, Lü Qiang, Wang Yang, Liu Zhan-Bo. Effects of doping concentration and sintering temperature on luminescence of CaWO4:Eu3+ phosphor. Acta Physica Sinica,
2012, 61(7): 077802.
doi: 10.7498/aps.61.077802
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Xia Zhong-Qiu, Li Rong-Ping. First principles study of rare earth doped in ZnTe used for CdTe solar cell back contact layer. Acta Physica Sinica,
2012, 61(1): 017108.
doi: 10.7498/aps.61.017108
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Gao Li, Zhang Jian-Min. Photoluminescence of diluted Mg doped ZnO thin films and band-gap change mechanisms. Acta Physica Sinica,
2010, 59(2): 1263-1267.
doi: 10.7498/aps.59.1263
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Liu Chun-Ming, Fang Li-Mei, Zu Xiao-Tao. Photoluminescence and magnetic properties of cobalt doped SnO2 nano-powder. Acta Physica Sinica,
2009, 58(2): 936-940.
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Wu Ding-Cai, Hu Zhi-Gang, Duan Man-Yi, Xu Lu-Xiang, Liu Fang-Shu, Dong Cheng-Jun, Wu Yan-Nan, Ji Hong-Xuan, Xu Ming. Synthesis and photoluminescence of (Co, Cu)-doped ZnO thin films. Acta Physica Sinica,
2009, 58(10): 7261-7266.
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Ji Zi-Wu, Mino Hirofumi, Kojima Eiji, Akimoto Ryoichi, Takeyama Shojiro. Optical property of modulated n-doped ZnSe/BeTe type-Ⅱ quantum wells. Acta Physica Sinica,
2008, 57(5): 3260-3266.
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Liao Guo-Jin, Yan Shao-Feng, Ba De-Chun. The blue luminescence of cerium doped aluminum oxide thin film. Acta Physica Sinica,
2008, 57(11): 7327-7332.
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Zhang Peng, Zhou Yin-Hua, Liu Xiu-Fen, Tian Wen-Jing, Li Min, Zhang Guo. Study on the energy transfer and luminescent properties in PVK:DBVP blend system. Acta Physica Sinica,
2006, 55(10): 5494-5498.
doi: 10.7498/aps.55.5494
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Zhu Zhen-Hua, Lei Ming-Kai. Structure and photoluminescence of Er3+-doped Al2O3 composite powders by mixing with SiO2. Acta Physica Sinica,
2006, 55(9): 4956-4961.
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He Li-Rong, Gu Chun-Ming, Shen Wen-Zhong, Cao Jun-Cheng, Hiroshi Ogawa, Guo Qi-Xin. Generation and detection of terahertz radiation on reactive ion etched ZnTe surfaces. Acta Physica Sinica,
2005, 54(10): 4938-4943.
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Xu Bo, Yu Qing-Xuan, Wu Qi-Hong, Liao Yuan, Wang Guan-Zhong, Fang Rong-Chuan. Effects of strain and Mg-dopant on the photoluminescencespectra in p-type GaN. Acta Physica Sinica,
2004, 53(1): 204-209.
doi: 10.7498/aps.53.204
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Liu Rui, Gu Chun-Ming, He Li-Rong, Wu Sen, Shen Wen-Zhong, Ogawa Hiroshi, Guo Qi-Xin. Generation of terahertz radiation via optical rectification and electro-optic detection in ZnTe crystals. Acta Physica Sinica,
2004, 53(4): 1217-1222.
doi: 10.7498/aps.53.1217
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Peng Ai-Hua, Xie Er-Qing, Jiang Ning, Zhang Zhi-Min, Li Peng, He De-Yan. The photoluminescence characterization of rare earths (Tb, Gd) embedded into por ous silicon. Acta Physica Sinica,
2003, 52(7): 1792-1796.
doi: 10.7498/aps.52.1792
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