A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films

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Abstract
In this paper, we report the photoluminescence from high-quality nanocrystalline ZnO thin films. The high-quality nanocrystalline ZnO thin films are prepared by thermal oxidation of ZnS films at 800℃, which are deposited by low-pressure metal-organic chemical vapor deposition technique. X-ray diffraction indicated that the nanocrystalline ZnO thin films have a polycrystalline hexagonal wurtzite structure. A strong ultraviolet emission peak at 3.26 eV was observed and the deep-level emission band was barely observable at room temperature. The strength (ΓLO) of the exciton-longitudinal-optical (LO)-phonon coupling is deduced from the temperature dependence of the full width at half maximum of the fundamental excitonic peak. ΓLO is reduced greatly due to the quantum confinement effect.

Keywords:
photoluminescence /

thermal oxidation /

exciton /

nanocrystalline ZnO thin film
Authors and contacts
Zhang Xi-Tian²,

Xiao Zhi-Yan¹,

Zhang Wei-Li¹,

Gao Hong¹,

Wang Yu-Xi¹,

Liu Yi-Chun³,

Zhang Ji-Ying³,

Xu Wu³

(1)哈尔滨师范大学物理系，哈尔滨 150080; (2)哈尔滨师范大学物理系，哈尔滨 150080;中国科学院激发态物理开放研究实验室，中国科学院长春光学精密机械与物理研究所，长春 130021; (3)中国科学院激发态物理开放研究实验室，中国科学院长春光学精密机械与物理研究所，长春 130021
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