Magnetoresistance effect of double-barrier magnetic tunneling junction applied in spin transistors

Zeng Zhong-Ming; Han Xiu-Feng; Du Guan-Xiang; Zhan Wen-Shan; Wang Yong; Zhang Ze

doi:10.7498/aps.54.3351

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Zeng Zhong-Ming, Han Xiu-Feng, Du Guan-Xiang, Zhan Wen-Shan, Wang Yong, Zhang Ze. Magnetoresistance effect of double-barrier magnetic tunneling junction applied in spin transistorsJ. Acta Physica Sinica, 2005, 54(7): 3351-3356. DOI: 10.7498/aps.54.3351

Citation:

Zeng Zhong-Ming, Han Xiu-Feng, Du Guan-Xiang, Zhan Wen-Shan, Wang Yong, Zhang Ze. Magnetoresistance effect of double-barrier magnetic tunneling junction applied in spin transistorsJ. Acta Physica Sinica, 2005, 54(7): 3351-3356. DOI: 10.7498/aps.54.3351

Citation:

Zeng Zhong-Ming, Han Xiu-Feng, Du Guan-Xiang, Zhan Wen-Shan, Wang Yong, Zhang Ze. Magnetoresistance effect of double-barrier magnetic tunneling junction applied in spin transistorsJ. Acta Physica Sinica, 2005, 54(7): 3351-3356. DOI: 10.7498/aps.54.3351