[1] |
Wang Shuai, Ge Chen, Xu Zu-Yin, Cheng Ai-Qiang, Chen Dun-Jun. Modeling of Temperature Effect on the DC Characteristics for GaN Devices. Acta Physica Sinica,
2024, 0(0): .
doi: 10.7498/aps.73.20240765
|
[2] |
Xie Tian-Ci, Zhang Bin, He Bo, Li Hao-Peng, Qin Zhuang, Qian Jin-Qian, Shi Qie-Ming, Lewis Elfed, Sun Wei-Min. Mathematical algorithm model of absolute dose in radiotherapy. Acta Physica Sinica,
2021, 70(1): 018701.
doi: 10.7498/aps.70.20200986
|
[3] |
Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei. Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2021, 70(21): 217301.
doi: 10.7498/aps.70.20210700
|
[4] |
Liu Nai-Zhang, Zhang Xue-Bing, Yao Ruo-He. The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances. Acta Physica Sinica,
2020, 69(7): 077302.
doi: 10.7498/aps.69.20191931
|
[5] |
Yuan Song, Duan Bao-Xing, Yuan Xiao-Ning, Ma Jian-Chong, Li Chun-Lai, Cao Zhen, Guo Hai-Jun, Yang Yin-Tang. Experimental research on the new Al0.25Ga0.75N/GaN HEMTs with a step AlGaN layer. Acta Physica Sinica,
2015, 64(23): 237302.
doi: 10.7498/aps.64.237302
|
[6] |
Gu Wen-Ping, Zhang Lin, Li Qing-Hua, Qiu Yan-Zhang, Hao Yue, Quan Si, Liu Pan-Zhi. Effect of neutron irradiation on the electrical properties of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2014, 63(4): 047202.
doi: 10.7498/aps.63.047202
|
[7] |
Yu Chen-Hui, Luo Xiang-Dong, Zhou Wen-Zheng, Luo Qing-Zhou, Liu Pei-Sheng. Investigation on the current collapse effect of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs. Acta Physica Sinica,
2012, 61(20): 207301.
doi: 10.7498/aps.61.207301
|
[8] |
Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue. A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2012, 61(4): 047301.
doi: 10.7498/aps.61.047301
|
[9] |
Lü Ling, Zhang Jin-Cheng, Li Liang, Ma Xiao-Hua, Cao Yan-Rong, Hao Yue. Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2012, 61(5): 057202.
doi: 10.7498/aps.61.057202
|
[10] |
Jiang Zhi-Hong, Wang Hui, Gao Chao. A evolving network model generated by random walk and policy attachment. Acta Physica Sinica,
2011, 60(5): 058903.
doi: 10.7498/aps.60.058903
|
[11] |
Bao Jun-Lin, Lin Li-Yan, He Liang, Du Lei. Noise as a characteriscic for current transmitting rateof optoelectronic coupled devicesfor ionization radiation damage. Acta Physica Sinica,
2011, 60(4): 047202.
doi: 10.7498/aps.60.047202
|
[12] |
Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong. An model of tunneling gate current for uniaxially strained Si nMOSFET. Acta Physica Sinica,
2011, 60(9): 097302.
doi: 10.7498/aps.60.097302
|
[13] |
Zhang Jin-Cheng, Mao Wei, Liu Hong-Xia, Wang Chong, Zhang Jin-Feng, Hao Yue, Yang Lin-An, Xu Sheng-Rui, Bi Zhi-Wei, Zhou Zhou, Yang Ling, Wang Hao, Yang Cui, Ma Xiao-Hua. Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors. Acta Physica Sinica,
2011, 60(1): 017205.
doi: 10.7498/aps.60.017205
|
[14] |
Li Qi, Zhang Bo, Li Zhao-Ji. A new analytical model of breakdown voltage for the SD LDMOS. Acta Physica Sinica,
2008, 57(3): 1891-1896.
doi: 10.7498/aps.57.1891
|
[15] |
Li Ruo-Fan, Yang Rui-Xia, Wu Yi-Bin, Zhang Zhi-Guo, Xu Na-Ying, Ma Yong-Qiang. Research on the current collapse in AlGaN/GaN high-electron-mobility transistors through the inverse piezoelectric polarization model. Acta Physica Sinica,
2008, 57(4): 2450-2455.
doi: 10.7498/aps.57.2450
|
[16] |
Wei Wei, Lin Ruo-Bing, Feng Qian, Hao Yue. Current collapse mechanism of field-plated AlGaN/GaN HEMTs. Acta Physica Sinica,
2008, 57(1): 467-471.
doi: 10.7498/aps.57.467
|
[17] |
Xi Guang-Yi, Ren Fan, Hao Zhi-Biao, Wang Lai, Li Hong-Tao, Jiang Yang, Zhao Wei, Han Yan-Jun, Luo Yi. Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTs. Acta Physica Sinica,
2008, 57(11): 7238-7243.
doi: 10.7498/aps.57.7238
|
[18] |
Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica,
2007, 56(6): 3504-3508.
doi: 10.7498/aps.56.3504
|
[19] |
Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua. A physical-based percolation model for gate oxide TDDB. Acta Physica Sinica,
2003, 52(8): 2046-2051.
doi: 10.7498/aps.52.2046
|
[20] |
LIU HONG-XIA, FANG JIAN-PING, HAO YUE. EXPERIMENTAL ANALYSIS AND PHYSICAL MODEL INVESTIGATION OF TDDB OF THIN GATE OXIDE. Acta Physica Sinica,
2001, 50(6): 1172-1177.
doi: 10.7498/aps.50.1172
|