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2024, 0(0): .
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Wang Xiao-Ka, Tang Fu-Ling, Xue Hong-Tao, Si Feng-Juan, Qi Rong-Fei, Liu Jing-Bo. First-principles study of H, Cl and F passivation for Cu2ZnSnS4(112) surface states. Acta Physica Sinica,
2018, 67(16): 166401.
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Chen Jian-Hui, Yang Jing, Shen Yan-Jiao, Li Feng, Chen Jing-Wei, Liu Hai-Xu, Xu Ying, Mai Yao-Hua. Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon. Acta Physica Sinica,
2015, 64(19): 198801.
doi: 10.7498/aps.64.198801
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He Yan-Bin, Jia Jian-Feng, Wu Hai-Shun. First-principles study of stability and electronic structure of N2H4 adsorption on NiFe(111) alloy surface. Acta Physica Sinica,
2015, 64(20): 203101.
doi: 10.7498/aps.64.203101
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Jiang En-Hai, Zhu Xing-Feng, Chen Ling-Fu. First-principles study of the electronic structure, magnetism, and spin-polarization in Heusler alloy Co2MnAl(100) surface. Acta Physica Sinica,
2015, 64(14): 147301.
doi: 10.7498/aps.64.147301
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Xue Yuan, Gao Chao-Jun, Gu Jin-Hua, Feng Ya-Yang, Yang Shi-E, Lu Jing-Xiao, Huang Qiang, Feng Zhi-Qiang. Study on the properties and optical emission spectroscopy of the intrinsic silicon thin film in silicon heterojunction solar cells. Acta Physica Sinica,
2013, 62(19): 197301.
doi: 10.7498/aps.62.197301
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Zheng Xue, Yu Xue-Gong, Yang De-Ren. Passivation property of -Si:H/SiNx stack-layer film in crystalline silicon solar cells. Acta Physica Sinica,
2013, 62(19): 198801.
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Zhang Xiang, Liu Bang-Wu, Xia Yang, Li Chao-Bo, Liu Jie, Shen Ze-Nan. The passivation of Al2O3 and its applications in the crystalline silicon solar cell. Acta Physica Sinica,
2012, 61(18): 187303.
doi: 10.7498/aps.61.187303
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Pan Shu-Wan, Qi Dong-Feng, Chen Song-Yan, Li Cheng, Huang Wei, Lai Hong-Kai. Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact. Acta Physica Sinica,
2011, 60(9): 098108.
doi: 10.7498/aps.60.098108
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Lu Shuo, Zhang Yue, Shang Jia-Xiang. First principles study on structure and property of Si2 CN4(010) surface. Acta Physica Sinica,
2011, 60(2): 027302.
doi: 10.7498/aps.60.027302
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Fan Qin-Na, Li Wei, Zhang Lin. Molecular dynamics study of relaxation and local structure changes in a rapidly quenched molten Cu57 cluster. Acta Physica Sinica,
2010, 59(4): 2428-2433.
doi: 10.7498/aps.59.2428
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Zhang Lin, Xu Song-Ning, Li Wei, Sun Hai-Xia, Zhang Cai-Bei. Structural changes during freezing and coalescing of small sized clusters on atomic scale. Acta Physica Sinica,
2009, 58(13): 58-S66.
doi: 10.7498/aps.58.58
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Bi Zhi-Wei, Feng Qian, Hao Yue, Yue Yuan-Zheng, Zhang Zhong-Fen, Mao Wei, Yang Li-Yuan, Hu Gui-Zhou. Effect of Al2O3 dielectric layer thickness on the AlGaN/GaN metal-oxide-semiconductor higher-electron-mobility transistor characteristics. Acta Physica Sinica,
2009, 58(10): 7211-7215.
doi: 10.7498/aps.58.7211
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Zhao Qian, Zhang Lin, Qi Yang, Zhang Zong-Ning. Molecular dynamics study of structures of a Cu13 cluster supported on a Cu(001) surface at low temperatures. Acta Physica Sinica,
2009, 58(13): 47-S52.
doi: 10.7498/aps.58.47
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Zhang Lin, Zhang Cai-Bei, Qi Yang. Molecular dynamics study on structural change of a Au959 cluster supported on MgO(100) surface at low temperature. Acta Physica Sinica,
2009, 58(13): 53-S57.
doi: 10.7498/aps.58.53
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Liu Gui-Li. Study of corrosion effect of Pt on Ti alloys by recursion method. Acta Physica Sinica,
2009, 58(5): 3359-3363.
doi: 10.7498/aps.58.3359
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Zhu Jian-Xin, Li Yong-Hua, Meng Fan-Ling, Liu Chang-Sheng, Zheng Wei-Tao, Wang Yu-Ming. A first principles investigation on NiTi alloy. Acta Physica Sinica,
2008, 57(11): 7204-7209.
doi: 10.7498/aps.57.7204
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Liu Gui-Li. Electronic theoretical study on the corrosion and passivation mechanism of Ti metal. Acta Physica Sinica,
2008, 57(7): 4441-4445.
doi: 10.7498/aps.57.4441
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Sun Tao, Chen Xing-Guo, Hu Xiao-Ning, Li Yan-Jin. Analysis of surface leakage and 1/f noise on long-wavelength infrared HgCdTe photodiodes. Acta Physica Sinica,
2005, 54(7): 3357-3362.
doi: 10.7498/aps.54.3357
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Lin Shao-Jie, Zheng Hao-Ping. Electronic structure of the surface of LaNi5 crystal. Acta Physica Sinica,
2005, 54(10): 4680-4687.
doi: 10.7498/aps.54.4680
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