| [1] |
Jian Chao-Chao, Ma Xiang-Chao, Zhao Zi-Han, Zhang Jian-Qi. Temperature dependence of MXenes plasmons induced hot carrier generation and transport. Acta Physica Sinica,
2024, 73(11): 117801.
doi: 10.7498/aps.73.20231924
|
| [2] |
Jia Xiao-Fei, Wei Qun, Zhang Wen-Peng, He Liang, Wu Zhen-Hua. Analysis of thermal noise characteristics in 10 nm metal oxide semiconductor field effect transistor. Acta Physica Sinica,
2023, 72(22): 227303.
doi: 10.7498/aps.72.20230661
|
| [3] |
Zhang Lin, Ma Lin-Dong, Du Lin, Li Yan-Bo, Xu Xian-Feng, Huang Xin-Rong. Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltage. Acta Physica Sinica,
2023, 72(13): 138501.
doi: 10.7498/aps.72.20230207
|
| [4] |
Zhang Cai-Xia, Ma Xiang-Chao, Zhang Jian-Qi. Theoretical study on surface plasmon and hot carrier transport properties of Au(111) films. Acta Physica Sinica,
2022, 71(22): 227801.
doi: 10.7498/aps.71.20221166
|
| [5] |
Zhang Meng, Yao Ruo-He, Liu Yu-Rong. A channel thermal noise model of nanoscaled metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2020, 69(5): 057101.
doi: 10.7498/aps.69.20191512
|
| [6] |
Zhang Meng, Yao Ruo-He, Liu Yu-Rong, Geng Kui-Wei. Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2020, 69(17): 177102.
doi: 10.7498/aps.69.20200497
|
| [7] |
Zhou Hang, Zheng Qi-Wen, Cui Jiang-Wei, Yu Xue-Feng, Guo Qi, Ren Di-Yuan, Yu De-Zhao, Su Dan-Dan. Enhanced channel hot carrier effect of 0.13 m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect. Acta Physica Sinica,
2016, 65(9): 096104.
doi: 10.7498/aps.65.096104
|
| [8] |
Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong. A model of hot carrier gate current for uniaxially strained Si NMOSFET. Acta Physica Sinica,
2014, 63(19): 197103.
doi: 10.7498/aps.63.197103
|
| [9] |
Xin Yan-Hui, Liu Hong-Xia, Wang Shu-Long, Fan Xiao-Jiao. Two-dimensional model of symmetrical double-gate strained Si single Halo metal-oxide semiconductor field effect transistor with gate stack dielectric. Acta Physica Sinica,
2014, 63(24): 248502.
doi: 10.7498/aps.63.248502
|
| [10] |
Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng. Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage. Acta Physica Sinica,
2014, 63(23): 237302.
doi: 10.7498/aps.63.237302
|
| [11] |
Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang. A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica,
2012, 61(10): 107803.
doi: 10.7498/aps.61.107803
|
| [12] |
Sun Peng, Du Lei, Chen Wen-Hao, He Liang. A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise. Acta Physica Sinica,
2012, 61(6): 067801.
doi: 10.7498/aps.61.067801
|
| [13] |
Hu Hui-Yong, Lei Shuai, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin, Wang Bin. Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate. Acta Physica Sinica,
2012, 61(10): 107301.
doi: 10.7498/aps.61.107301
|
| [14] |
You Hai-Long, Lan Jian-Chun, Fan Ju-Ping, Jia Xin-Zhang, Zha Wei. Research on characteristics degradation of n-metal-oxide-semiconductor field-effect transistor induced by hot carrier effect due to high power microwave. Acta Physica Sinica,
2012, 61(10): 108501.
doi: 10.7498/aps.61.108501
|
| [15] |
Yang Yan-Ning, Zhang Zhi-Yong, Zhang Fu-Chun, Zhang Wei-Hu, Yan Jun-Feng, Zhai Chun-Xue. Temperature dependence of field emission of nano-diamond. Acta Physica Sinica,
2010, 59(4): 2666-2671.
doi: 10.7498/aps.59.2666
|
| [16] |
Li Wei-Hua, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin. Non-Gaussianity of noise in n-type metal oxide semiconductor field effect transistor. Acta Physica Sinica,
2009, 58(10): 7183-7188.
doi: 10.7498/aps.58.7183
|
| [17] |
Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua. Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise. Acta Physica Sinica,
2008, 57(8): 5205-5211.
doi: 10.7498/aps.57.5205
|
| [18] |
. Design of a gate-coupled electrostatic discharge protection structure. Acta Physica Sinica,
2007, 56(12): 7242-7247.
doi: 10.7498/aps.56.7242
|
| [19] |
REN HONG-XIA, HAO YUE, XU DONG-GANG. STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR. Acta Physica Sinica,
2000, 49(7): 1241-1248.
doi: 10.7498/aps.49.1241
|
| [20] |
YU MING-KANG, LIU FU-SUI. A THEORY ON THE 1/f NOISE IN METALS. Acta Physica Sinica,
1983, 32(5): 593-606.
doi: 10.7498/aps.32.593
|
下载:
