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2018, 67(7): 076801.
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2015, 64(23): 237302.
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Gu Wen-Ping, Zhang Lin, Li Qing-Hua, Qiu Yan-Zhang, Hao Yue, Quan Si, Liu Pan-Zhi. Effect of neutron irradiation on the electrical properties of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2014, 63(4): 047202.
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Yu Chen-Hui, Luo Xiang-Dong, Zhou Wen-Zheng, Luo Qing-Zhou, Liu Pei-Sheng. Investigation on the current collapse effect of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs. Acta Physica Sinica,
2012, 61(20): 207301.
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Lü Ling, Zhang Jin-Cheng, Li Liang, Ma Xiao-Hua, Cao Yan-Rong, Hao Yue. Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2012, 61(5): 057202.
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Zhang Jin-Cheng, Mao Wei, Liu Hong-Xia, Wang Chong, Zhang Jin-Feng, Hao Yue, Yang Lin-An, Xu Sheng-Rui, Bi Zhi-Wei, Zhou Zhou, Yang Ling, Wang Hao, Yang Cui, Ma Xiao-Hua. Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors. Acta Physica Sinica,
2011, 60(1): 017205.
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Ding Guo-Jian, Guo Li-Wei, Xing Zhi-Gang, Chen Yao, Xu Pei-Qiang, Jia Hai-Qiang, Zhou Jun-Ming, Chen Hong. Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers. Acta Physica Sinica,
2010, 59(8): 5724-5729.
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Wang Lin, Hu Wei-Da, Chen Xiao-Shuang, Lu Wei. Study on mechanism of current collapse and knee voltage drift for AlGaN/GaN HEMTs. Acta Physica Sinica,
2010, 59(8): 5730-5737.
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Liu Lin-Jie, Yue Yuan-Zheng, Zhang Jin-Cheng, Ma Xiao-Hua, Dong Zuo-Dian, Hao Yue. Temperature characteristics of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric. Acta Physica Sinica,
2009, 58(1): 536-540.
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Gu Wen-Ping, Zhang Jin-Cheng, Wang Chong, Feng Qian, Ma Xiao-Hua, Hao Yue. Influence of 60Co γ-ray irradiation on AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2009, 58(2): 1161-1165.
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Wang Chong, Quan Si, Zhang Jin-Feng, Hao Yue, Feng Qian, Chen Jun-Feng. Simulation and experimental investigation of recessed-gate AlGaN/GaN HEMT. Acta Physica Sinica,
2009, 58(3): 1966-1970.
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Gu Wen-Ping, Hao Yue, Zhang Jin-Cheng, Wang Chong, Feng Qian, Ma Xiao-Hua. Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs. Acta Physica Sinica,
2009, 58(1): 511-517.
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Wang Xin-Juan, Zhang Jin-Feng, Zhang Jin-Cheng, Hao Yue. Analysis of structure parameters and current conduction mechanisms of AlGaN/GaN Schottky contacts. Acta Physica Sinica,
2008, 57(5): 3171-3175.
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Wei Wei, Hao Yue, Feng Qian, Zhang Jin-Cheng, Zhang Jin-Feng. Geometrical optimization of AlGaN/GaN field-plate high electron mobility transistor. Acta Physica Sinica,
2008, 57(4): 2456-2461.
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Li Ruo-Fan, Yang Rui-Xia, Wu Yi-Bin, Zhang Zhi-Guo, Xu Na-Ying, Ma Yong-Qiang. Research on the current collapse in AlGaN/GaN high-electron-mobility transistors through the inverse piezoelectric polarization model. Acta Physica Sinica,
2008, 57(4): 2450-2455.
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Xi Guang-Yi, Ren Fan, Hao Zhi-Biao, Wang Lai, Li Hong-Tao, Jiang Yang, Zhao Wei, Han Yan-Jun, Luo Yi. Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTs. Acta Physica Sinica,
2008, 57(11): 7238-7243.
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Guo Liang-Liang, Feng Qian, Ma Xiang-Bai, Hao Yue, Liu Jie. Relation between breakdown voltage and current collapse in GaN FP-HEMTs. Acta Physica Sinica,
2007, 56(5): 2900-2904.
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Guo Liang-Liang, Feng Qian, Hao Yue, Yang Yan. Study of high breakdown-voltage AlGaN/GaN FP-HEMT. Acta Physica Sinica,
2007, 56(5): 2895-2899.
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Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng. Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias. Acta Physica Sinica,
2006, 55(7): 3622-3628.
doi: 10.7498/aps.55.3622
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