Effects of annealing of r-cut sapphire substrate on its surface morphology and the growth of CeO2 buffer layers and the Tl-2212 superconducting films

Xie Qing-Lian; Yan Shao-Lin; Zhao Xin-Jie; Fang Lan; Ji Lu; Zhang Yu-Ting; You Shi-Tou; Li Jia-Lei; Zhang Xu; Zhou Tie-Ge; Zuo Tao; Yue Hong-Wei

doi:10.7498/aps.57.519

Abstract
In this study, the surface morphology evolution and the change of the phase structure of r-cut sapphire substrates annealed at different temperatures for different time in O2, and the effects of annealing conditions on the growth of CeO2 and Tl-2212 films, were investigated by AFM and XRD. The results of AFM show that the local steps on the substrate annealed at 1000℃ is formed firstly, and then the multilayer terrace-and-step structure, yielding from prolonging annealing time, evolves into wide terrace-and-step structure with ultrasmooth terrace through the coalition of initial localized steps, which slightly tilts to the surface. XRD measurements show that the CeO2 films prepared on r-cut sapphire annealed at the optimized conditions and the 500 nm thick Tl-2212 films grown on the CeO2 buffer layers subsequently possess excellent in-plane and out-of plane orientation, and the annealing temperature and annealing time have strong effect on the crystalline quality of substrates and CeO2 films. The Tl-2212 films have a high transition temperature (Tc=104.7 K), a high critical current density (Jc=3.5 MA/cm2 at 77.3K and zero applied magnetic field) and a low surface resistance (Rs=390μΩ at 10GHz and 77K).

Keywords:
Tl-2212 superconducting thin film /

r-cut sapphire /

buffer layer
Authors and contacts
Xie Qing-Lian,

Yan Shao-Lin,

Zhao Xin-Jie,

Fang Lan,

Ji Lu,

Zhang Yu-Ting,

You Shi-Tou,

Li Jia-Lei,

Zhang Xu,

Zhou Tie-Ge,

Zuo Tao,

Yue Hong-Wei

1.
南开大学信息技术科学学院电子信息科学与技术系，天津 300071
References

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Vol. 57, Issue 1 - 2008-01-05

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Effects of annealing of r-cut sapphire substrate on its surface morphology and the growth of CeO2 buffer layers and the Tl-2212 superconducting films

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Effects of annealing of r-cut sapphire substrate on its surface morphology and the growth of CeO2 buffer layers and the Tl-2212 superconducting films

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