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Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang. Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica,
2017, 66(15): 158501.
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Feng Bo, Deng Biao, Liu Le-Gong, Li Zeng-Cheng, Feng Mei-Xin, Zhao Han-Min, Sun Qian. Effect of plasma surface treatment on embedded n-contact for GaN-based blue light-emitting diodes grown on Si substrate. Acta Physica Sinica,
2017, 66(4): 047801.
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Wang Guang-Xu, Chen Peng, Liu Jun-Lin, Wu Xiao-Ming, Mo Chun-Lan, Quan Zhi-Jue, Jiang Feng-Yi. Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrate. Acta Physica Sinica,
2016, 65(8): 088501.
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Huang Bin-Bin, Xiong Chuan-Bing, Tang Ying-Wen, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate. Acta Physica Sinica,
2015, 64(17): 177804.
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica,
2015, 64(10): 107801.
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Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer. Acta Physica Sinica,
2015, 64(18): 187801.
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Liu Zhan-Hui, Zhang Li-Li, Li Qing-Fang, Zhang Rong, Xiu Xiang-Qian, Xie Zi-Li, Shan Yun. InGaN/GaN blue light emitting diodes grown on Si(110) and Si(111) substrates. Acta Physica Sinica,
2014, 63(20): 207304.
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Chen Wei-Chao, Tang Hui-Li, Luo Ping, Ma Wei-Wei, Xu Xiao-Dong, Qian Xiao-Bo, Jiang Da-Peng, Wu Feng, Wang Jing-Ya, Xu Jun. Research progress of substrate materials used for GaN-Based light emitting diodes. Acta Physica Sinica,
2014, 63(6): 068103.
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Cao Dong-Xing, Guo Zhi-You, Liang Fu-Bo, Yang Xiao-Dong, Huang Hong-Yong. The preparation and performance analysis of GaN-based high-voltage DC light emitting diode. Acta Physica Sinica,
2012, 61(13): 138502.
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Liu Mu-Lin, Min Qiu-Ying, Ye Zhi-Qing. Efficiency droop in blue InGaN/GaN light emitting diodes on Si substrate. Acta Physica Sinica,
2012, 61(17): 178503.
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Gao Hui, Kong Fan-Min, Li Kang, Chen Xin-Lian, Ding Qing-An, Sun Jing. Structural optimization of GaN blue light LED with double layers of photonic crystals. Acta Physica Sinica,
2012, 61(12): 127807.
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Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi. Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates. Acta Physica Sinica,
2011, 60(7): 078503.
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Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie. A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica,
2011, 60(9): 098107.
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Wang Lai, Wang Lei, Ren Fan, Zhao Wei, Wang Jia-Xing, Hu Jian-Nan, Zhang Chen, Hao Zhi-Biao, Luo Yi. GaN grown on AlN/sapphire templates. Acta Physica Sinica,
2010, 59(11): 8021-8025.
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Lin Han, Liu Shou, Zhang Xiang-Su, Liu Bao-Lin, Ren Xue-Chang. Enhanced external quantum efficiency of light emitting diodes by fabricating two-dimensional photonic crystal sapphire substrate with holographic technique. Acta Physica Sinica,
2009, 58(2): 959-963.
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Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao. Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica,
2009, 58(10): 7189-7193.
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Xiong Chuan-Bing, Jiang Feng-Yi, Wang Li, Fang Wen-Qing, Mo Chun-Lan. The investigation on the interference phenomenon in electroluminescence spectrum of vertical structured InGaAlN multiple quantum well light-emitting diodes. Acta Physica Sinica,
2008, 57(12): 7860-7864.
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Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling. Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica,
2008, 57(1): 472-476.
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di. Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica,
2006, 55(3): 1424-1429.
doi: 10.7498/aps.55.1424
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