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A series of phosphors of Zn1.92-xMgxSiO4:0.08Mn（0≤x≤0.12）were successfully synthesized at various heating atmosphere via sol-gel method. The structure and luminescent properties of the samples were characterized by X-ray diffractometer (XRD) and the FLS920T Spectrophotometer, respectively. The results indicated that in the Zn1.92SiO4:0.08Mn system, the Mg2+ doped could substitute for the Zn2+ site and result in the decrease of lattice parameters. The absorption band of the MgO4 cluster was located at about 154 nm in vacuum ultraviolet region. Mg2+ ion doping has favorable influence on the photoluminescence properties of Zn2SiO4:Mn2+, the optimum concentration of Mg2+ being 0.06 mol under 147 nm excitation. The emission intensity of Zn1.92-xMgx SiO4:0.08Mn2+ phosphors calcined in the mixture of nitrogen and hydrogen were stronger than those of the phosphors calcined in other heating atmospheres, and the emission intensity of Zn1.86Mg0.06SiO4:0.08Mn2+ calcined in the mixture of N2 and H2 was 113% of that of Zn1.92SiO4:0.08Mn2+, being 5% higher than that of commercial phosphor. After Mg2+ doping the decay time of phosphor was much shortened and the decay time of Zn1.86Mg0.06SiO4:0.08Mn2+ was 3.89 ms, which was shorter by 1.33 ms than that of commercial product.
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Keywords:
- Mg2+ doped /
- Zn2SiO4:Mn2+ /
- sol-gel method /
- vacuum ultraviolet (VUV)
[1] ［1］Kreng V B, Wang H T 2009 Comput. Ind. Eng. doi:10.1016/j.cie.2009.05.008
[2] ［2］Liu D L, Tu Y, Yang L L 2009 Vacuum Electronics 01 39 (in Chinese)［刘德龙、屠彦、杨兰兰 2009 真空电子技术 01 39］
[3] ［3］Wu C F, Meng X, Li J, Wang Y H 2009 Acta Phys. Sin. 58 6518 (in Chinese) ［吴春芳、孟燮、李杰、王育华 2009 物理学报 58 6518］
[4] ［4］Liao Q R, Zhuang w D, Xia T, Liu R H, Hu Y S, Teng X M, Liu Y H 2009 Acta Phys. Sin. 58 2776 (in Chinese) ［廖秋荣、庄卫东、夏天、刘荣辉、胡运生、滕晓明、刘元红 2009 物理学报 58 2776］
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[6] ［6］Gou J, Wang Y H, Li F, He L 2006 Acta Phys. Sin. 55 4310 (in Chinese) ［苟婧、王育华、李峰、何玲 2006 物理学报 55 4310］
[7] ［7］Yang Z P, Liu Y F 2006 Acta Phys. Sin. 55 4946 (in Chinese) ［杨志平、刘玉峰 2006 物理学报 55 4946］
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[9] ［9］Mai M, Feldmann C 2009 Solid State Sci. 11 528
[10] ］LukiDc＇ S R, PetroviDc＇ D M, DramiDc＇anin M D, MitriDc＇ M, DaDcˇanin L 2008 Scripta Mater. 58 655
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[16] ］Kang Y C, Lim M A, Park H D, Han M 2003 J. Electrochem. Soc. 150 H7
[17] ］Hao Y, Wang Y H 2009 J. Alloy. Compd. 470 565
[18] ］Hao Y, Wang Y H 2006 Electrochem. Solid St. 9 H100
[19] ］Sharma P, Bhatti H S 2009 J. Alloy. Compd. 473 483
[20] ］Hao Y, Wang Y h 2007 J. Lumin. 122-123 1006
[21] ］Wang Y h, Hao Y, Li h, Yu w 2006 J. Alloy. Compd. 425 339
[22] ］Im S J, Choi S Y, Manashirov O Y, Lee W T, Lee S J, Lee J W, Kim J M 1999 Proceedings of the 19th International Display Research Conference, Berlin Germany, September 6-9, 1999 P61
[23] ］Mishra K C, Johnson K H, DeBoer B G, Berkowitz J K, Olsen J 1991 J. Lumin. 47 197
[24] ］Masaaki, Tamatani 1974 Jpn. J. Appl. Phys. 13 950
[25] ］Morimo R, Mochinaga R, Nakamura K 1994 Mater. Res. Bull. 29 751
[26] ］Dexter D L 1954 J. Chem. Phys. 22 1063
[27] ］Lin Y h, Tang Z L, Zhang Z T, Nan C W 2002 Appl. Phys. Lett. 81 996
[28] ］Harlow G E, Shankland T J 1974 Geochim. Cosmochim. Acta. 38 589
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[1] ［1］Kreng V B, Wang H T 2009 Comput. Ind. Eng. doi:10.1016/j.cie.2009.05.008
[2] ［2］Liu D L, Tu Y, Yang L L 2009 Vacuum Electronics 01 39 (in Chinese)［刘德龙、屠彦、杨兰兰 2009 真空电子技术 01 39］
[3] ［3］Wu C F, Meng X, Li J, Wang Y H 2009 Acta Phys. Sin. 58 6518 (in Chinese) ［吴春芳、孟燮、李杰、王育华 2009 物理学报 58 6518］
[4] ［4］Liao Q R, Zhuang w D, Xia T, Liu R H, Hu Y S, Teng X M, Liu Y H 2009 Acta Phys. Sin. 58 2776 (in Chinese) ［廖秋荣、庄卫东、夏天、刘荣辉、胡运生、滕晓明、刘元红 2009 物理学报 58 2776］
[5] ［5］Deng C Y, He D W, Zhuang W D, Wang Y S, Kang K, Huang X W 2004 Chin. Phys. 13 473
[6] ［6］Gou J, Wang Y H, Li F, He L 2006 Acta Phys. Sin. 55 4310 (in Chinese) ［苟婧、王育华、李峰、何玲 2006 物理学报 55 4310］
[7] ［7］Yang Z P, Liu Y F 2006 Acta Phys. Sin. 55 4946 (in Chinese) ［杨志平、刘玉峰 2006 物理学报 55 4946］
[8] ［8］Zeng J H, Fu H L, Lou T J, Yu Y, Sun Y H, Li D Y 2009 Mater. Res. Bull. 44 1106
[9] ［9］Mai M, Feldmann C 2009 Solid State Sci. 11 528
[10] ］LukiDc＇ S R, PetroviDc＇ D M, DramiDc＇anin M D, MitriDc＇ M, DaDcˇanin L 2008 Scripta Mater. 58 655
[11] ］Wan J X, Wang Z H, Chen X Y, Mu L, Yu W C, Qian Y T 2006 J. Lumin. 121 32
[12] ］Cho T H, Chang H J 2003 Ceram. Int. 29 611
[13] ］Barthou C, Benoit J, Benalloul P 1994 J. Electrochem. Soc. 141 524
[14] ］Pappalardo R G, Miniscalco W J, Peters T E 1993 J. Lumin.55 87
[15] ］Kolk E V, Dorenbos P, Eijk C V, Bechtel H, Justel T, Nikol H, Ronda C R, Wiechert D U 2000 J. Lumin. 87-89 1246
[16] ］Kang Y C, Lim M A, Park H D, Han M 2003 J. Electrochem. Soc. 150 H7
[17] ］Hao Y, Wang Y H 2009 J. Alloy. Compd. 470 565
[18] ］Hao Y, Wang Y H 2006 Electrochem. Solid St. 9 H100
[19] ］Sharma P, Bhatti H S 2009 J. Alloy. Compd. 473 483
[20] ］Hao Y, Wang Y h 2007 J. Lumin. 122-123 1006
[21] ］Wang Y h, Hao Y, Li h, Yu w 2006 J. Alloy. Compd. 425 339
[22] ］Im S J, Choi S Y, Manashirov O Y, Lee W T, Lee S J, Lee J W, Kim J M 1999 Proceedings of the 19th International Display Research Conference, Berlin Germany, September 6-9, 1999 P61
[23] ］Mishra K C, Johnson K H, DeBoer B G, Berkowitz J K, Olsen J 1991 J. Lumin. 47 197
[24] ］Masaaki, Tamatani 1974 Jpn. J. Appl. Phys. 13 950
[25] ］Morimo R, Mochinaga R, Nakamura K 1994 Mater. Res. Bull. 29 751
[26] ］Dexter D L 1954 J. Chem. Phys. 22 1063
[27] ］Lin Y h, Tang Z L, Zhang Z T, Nan C W 2002 Appl. Phys. Lett. 81 996
[28] ］Harlow G E, Shankland T J 1974 Geochim. Cosmochim. Acta. 38 589
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