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ZnS thin films were prepared on glass substrate by RF magnetron sputtering technique.The quality of ZnS films formed at different deposition pressures,annealing temperatures and substrate temperatures were studied.The change of the film microstructure was analyzed by XRD and the lattice stress was evaluated.The spectral transmittance was measured by a spectrometer.From the spectrum,the band gap and Urbach energy were calculated.Scanning electron microscopy (SEM) was used to study the morphology of the surface of the sample.The result showed that there is big stress in the lattice when the substrate is at room temperature,and the value of stress increases with the pressure.After annealing at 300 ℃,the stress is minimal.When the substrate temperature is 350 ℃,the stress decreases,at the same time,ZnS films have good transmittance,and annealing at 300 ℃ improves the film quality.
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Keywords:
- ZnS thin film /
- radio frequence magnetron sputtering /
- stress
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[5] Qin Y,Zhang H,Tan S L,Liu T,Zhang P X 2009 Acta Phys.Sin. 58 3497 (in Chinese)[秦 毅、张 辉、谈松林、刘 婷、张鹏翔 2009 物理学报 58 3497]
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[15] Fu Y Q,Du H J,Zhang S,Gu Y W 2005 Surf.Coat.Technol. 198 389
[16] Kstenbauer H,Fontalvo G A,Kapp Marianne,Keckes J,Mitterer C 2007 Surf.Coat.Technol. 201 4777
[17] Hultman L 2000 Vacuum. 57 1
[18] Lv J G,Ye Z Z,Huang J Y,Zhao B H,Wang L 2003 Chin.J.Semicond.24 731 (in Chinese) [吕建国、叶志镇、黄靖云、赵炳辉、汪 雷 2003 半导体学报 24 731]
[19] Chang C R,Li Z Q,Xu Y Y,Zhou H Z,Luo X Y 2006 J.Funct.Mater.Dev.12 95 (in Chinese) [常春荣、李子全、徐芸芸、周衡志、骆心怡 2006 功能材料与器件学报 12 95]
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[1] McCandless E B,Dobson D K 2004 Sol.Energy. 77 839
[2] Wu X,Zhou J,Duda A,Keane J C,Dhere R G,Gessert T A,Yan Y,Noufi R 2001 17th European Solar Energy Conference (Munich:WIP) 995
[3] Martin AGreen 2002 Physica E14 65
[4] Martin AGreen 2000 Energy Policy. 28 989
[5] Qin Y,Zhang H,Tan S L,Liu T,Zhang P X 2009 Acta Phys.Sin. 58 3497 (in Chinese)[秦 毅、张 辉、谈松林、刘 婷、张鹏翔 2009 物理学报 58 3497]
[6] Ohashi M,Ichinohe Y,Shigaura G,Sasaki Y,Chikarayumi Y,Kimura Na,Kimura No,Sawada T,Suzuki K,Imai K,Saito H,Trubenko P A,Korostelin Yu V 2005 J.Crystal Growth. 278 320
[7] Li M,Mi X W 2009 Chin.Phys. B 18 5534
[8] Mastro M A,Eddy C R,Gaskill D K,Bassim N D,Casey J,Rosenberg A,Holm R T,Henry R L,Twigg M E 2006 J.Crystal Growth. 287 610
[9] Liu N N,Sun J M,Pan S H,Chen Z H,Wang R P,Shi W S,Wang X G 2000 Acta Phys.Sin. 49 1019 (in Chinese)[刘宁宁、孙甲明、潘少华、陈正豪、王荣平、师文生、王晓光 2000 物理学报 49 1019]
[10] Huang S H,Xiao H,Shou S 2009 Appl.Surf.Sci. 255 4547
[11] Laukaitis G,Lindroos S,Tamulevicius S,Leskel M 2001 Appl.Surf.Sci. 185 134
[12] Rodrigues S A S,Rolo A G,Khodorov A,Pereira M,Gomes M J M 2010 J.Euro.Ceram.Soc. 30 521
[13] Gui P F,Zheng Z R,Zhao Y J,Liu X,2006 Acta Phys.Sin. 55 6459 (in Chinese)[顾培夫、郑臻荣、赵永江、刘 旭 2006 物理学报 55 6459]
[14] L.Eckertova 1984 Physics of Thin Films (New York: Plenum press) p204
[15] Fu Y Q,Du H J,Zhang S,Gu Y W 2005 Surf.Coat.Technol. 198 389
[16] Kstenbauer H,Fontalvo G A,Kapp Marianne,Keckes J,Mitterer C 2007 Surf.Coat.Technol. 201 4777
[17] Hultman L 2000 Vacuum. 57 1
[18] Lv J G,Ye Z Z,Huang J Y,Zhao B H,Wang L 2003 Chin.J.Semicond.24 731 (in Chinese) [吕建国、叶志镇、黄靖云、赵炳辉、汪 雷 2003 半导体学报 24 731]
[19] Chang C R,Li Z Q,Xu Y Y,Zhou H Z,Luo X Y 2006 J.Funct.Mater.Dev.12 95 (in Chinese) [常春荣、李子全、徐芸芸、周衡志、骆心怡 2006 功能材料与器件学报 12 95]
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