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On the basis of the first oxide prepared anodized aluminum oxide template (AAO), the second, third and fourth oxidation preparation are implemented in turn. Then, the surface morphology and current curve changes of the AAO template with multiple oxidation preparation were compared and analyzed systemically. The apertures of nanopore made by the second, third and forth oxidation increase in order, the intervals between neighboring apertures reduce. However, the scale of ordered distribution of nanopores on the whole template surface does not change significantly. Then, carefully controlling the working conditions for the membrane-removed of the one-step oxidation AAO, the nanoporous with regular apertures and highly ordered was obtained after getting rid of the top oxidation layer about 10 minutes. Finally, based on those prepared AAO templates, integrated with the thermal nanoimprint lithography, we achieved the PMMA nano-pillar arrays with controllable lengths and diameters.
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Keywords:
- nanopillar arrays /
- PMMA /
- anodized aluminum oxide /
- multi-step anodizations
[1] Wang Y H, Mou J M, Cai W L, Shi G 2001 Acta Phys. Chim. Sin. 17 116
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[5] Fan Z Y, Razavil H, Do J W, Moriwaki A, Ergen O, Chuch Y L, Paul W L, Joel W A, Ali J 2009 Nature materials 10 1038
[6] Wu Z G, Zhang P J, Xu L, Li S K, Wang J, Li X D, Yan P X 2010 Acta Phys. Sin. 59 438 (in Chinese) [吴志国、 张鹏举、 徐 亮、 李拴魁、 王 君、 李旭东、 闫鹏勋 2010 物理学报 59 656]
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[10] Tada T, Poborchii V V, Kanayama T 2002 Microelectron. Eng. 63 259
[11] Gao H, Mu C, Wang F, Xu D S, Wu K, Xie Y C 2003 Appl. Phys. Lett. 93 5602
[12] Dong S K, LEE H U, Kim N H, Lee K H, Cho D W, Tai H K 2007 Microeletronic Engineering 84 1532
[13] Masuda H, Yamada H, Satoh M, Asoh H 1997 Appl. Phys. Lett. 19 71
[14] Masuda H, Fukuda K 1995 Seience 268 1466
[15] Yang P, An M Z, Su C N, Wang F P 2008 Electrochimica Acta 54 763
[16] zhang L D, Mou J M 2001 Nanomaterials and Nanostructure( Beijing: Science Press) p421 (in Chinese) [张立德、 牟季美 2001 纳米材料与纳米结构 (北京: 科学出版社) 第421页]
[17] Chen P L, Kuo C T, Tsai T G, Wu B W,Hsu C C, Pan F M 2003 Appl. Phys. Lett. 82 2796
[18] Yoo Y E, Kim T H, Choi D S, Hyun S M, Lee H J, Lee K H, Kim S K, Kim B H, Seo Y H, Lee H G, Lee J S 2009 Current Applied Physics 10 1016
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[1] Wang Y H, Mou J M, Cai W L, Shi G 2001 Acta Phys. Chim. Sin. 17 116
[2] Liu H W, Guo H M, Wang Y L, Shen C M 2004 Acta Phys. Sin. 53 656 (in Chinese) [刘虹雯、 郭海明、 王业亮、 申承民 2004 物理学报 53 656]
[3] Liu H W, Yang H Q, Gou H M, Wang Y L, Lin X, Pang S J, Gao H J 2002 Naotechnology 13 729
[4] Bai A Q, Hu D, Ding W C, Sun S J, Hu W X, Xue C L, Fan Z C, Cheng B W, Yu Y D, Wang Q M 2009 Acta Phys. Sin. 58 4997 (in Chinese) [白安琪、 胡 迪、 丁武昌、 苏少坚、 胡炜玄、 薛春来、 樊中朝、 成步安、 俞育德、 王启明 2009 物理学报 58 4997]
[5] Fan Z Y, Razavil H, Do J W, Moriwaki A, Ergen O, Chuch Y L, Paul W L, Joel W A, Ali J 2009 Nature materials 10 1038
[6] Wu Z G, Zhang P J, Xu L, Li S K, Wang J, Li X D, Yan P X 2010 Acta Phys. Sin. 59 438 (in Chinese) [吴志国、 张鹏举、 徐 亮、 李拴魁、 王 君、 李旭东、 闫鹏勋 2010 物理学报 59 656]
[7] Ou J, Perot B, Rothstein J P 2004 Phys. Fluids 16 4635
[8] Kaji N, Tezuka Y, Takamura Y, Ueda M, Nishimoto T, Nakanishi H, Horiike Y, Baba Y 2004 Anal. Chem. 76 15
[9] Kim P, Kim D H, Kim B, Choi S K, Lee S H, Khademhosseini A, Langer R, Suh K Y 2005 Nanotechnology 16 2420
[10] Tada T, Poborchii V V, Kanayama T 2002 Microelectron. Eng. 63 259
[11] Gao H, Mu C, Wang F, Xu D S, Wu K, Xie Y C 2003 Appl. Phys. Lett. 93 5602
[12] Dong S K, LEE H U, Kim N H, Lee K H, Cho D W, Tai H K 2007 Microeletronic Engineering 84 1532
[13] Masuda H, Yamada H, Satoh M, Asoh H 1997 Appl. Phys. Lett. 19 71
[14] Masuda H, Fukuda K 1995 Seience 268 1466
[15] Yang P, An M Z, Su C N, Wang F P 2008 Electrochimica Acta 54 763
[16] zhang L D, Mou J M 2001 Nanomaterials and Nanostructure( Beijing: Science Press) p421 (in Chinese) [张立德、 牟季美 2001 纳米材料与纳米结构 (北京: 科学出版社) 第421页]
[17] Chen P L, Kuo C T, Tsai T G, Wu B W,Hsu C C, Pan F M 2003 Appl. Phys. Lett. 82 2796
[18] Yoo Y E, Kim T H, Choi D S, Hyun S M, Lee H J, Lee K H, Kim S K, Kim B H, Seo Y H, Lee H G, Lee J S 2009 Current Applied Physics 10 1016
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