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中国物理学会期刊
Qu Jiang-Tao, Wang Xiao-Yan, Zhang He-Ming, Wang Guan-Yu, Song Jian-Jun, Qin Shan-Shan. Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistorJ. Acta Physica Sinica, 2011, 60(2): 027102. DOI: 10.7498/aps.60.027102
Citation: Qu Jiang-Tao, Wang Xiao-Yan, Zhang He-Ming, Wang Guan-Yu, Song Jian-Jun, Qin Shan-Shan. Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistorJ. Acta Physica Sinica, 2011, 60(2): 027102. DOI: 10.7498/aps.60.027102

Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistor

CSTR: 32037.14.aps.60.027102
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