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中国物理学会期刊
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Zhao Hong-Fei, Du Lei, He Liang, Bao Jun-Lin. Base resistance in Si unijunction transistor irradiated by 60Co γ-radiation. Acta Physica Sinica, 2011, 60(2): 028501. DOI: 10.7498/aps.60.028501
Citation: Zhao Hong-Fei, Du Lei, He Liang, Bao Jun-Lin. Base resistance in Si unijunction transistor irradiated by 60Co γ-radiation. Acta Physica Sinica, 2011, 60(2): 028501. DOI: 10.7498/aps.60.028501
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Base resistance in Si unijunction transistor irradiated by 60Co γ-radiation

Acta Phys. Sin., 2011, 60(2): 028501.
DOI: 10.7498/aps.60.028501
CSTR: 32037.14.aps.60.028501
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