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With the aim of understanding the relationships between polymer self-organization and charge carrier mobility of polymer organic field-effect transistor (OFET), we investigate crystalline microstructure change of annealing-induced self-organization of regioregular poly(3-hexylthiophene) (RR-P3HT) active thin layer in polymer OFET by synchrotron radiation grazing incident X-ray diffraction (GIXRD). The crystalline microstructures of RR-P3HT thin film with different preparation methods (spin-coating and drop-casting) and different concentrations (2.5 mg/ml and 3.5 mg/ml) at various annealing temperatures are studied. These results present that, the crystalline structures of RR-P3HT active layers annealed at 150 ℃ are better and enhanced to charge transport, which tend to pack form the thiophene rings are perpendicular and the π-π interchain stacking parallel to the substrate. Furthermore, we find that an appropriate annealing temperature can facilitate the crystal structure of edge-on form, resulting in field-effect mobility enhancement of polymer OFET.
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Keywords:
- polymer field-effect transistor /
- synchrotron radiation grazing incident X-ray diffraction /
- self-organization /
- annealing
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[9] Wisnieff R 1998 Nature (London) 394 225
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[19] Kline R J, McGehee M D, Toney M F 2006 Nature (London) 5 222
[20] Jiang X M, Jia Q J, Zheng W L, Liu Peng, Xi D C, Jiang Z M, Wang X 2000 High Energy Phys. And Nucl. Phys. 24 424 (in Chinese) [姜晓明、贾全杰、郑文莉、刘 鹏、冼鼎昌、蒋最敏、王 迅 2000高能物理与核物理 24 424]
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[22] Gay J M, Stocker P, Rhemore F 1993 J. Appl. Phys. 73 816
[23] Fuoss P H, Liang K S, Eisenberger P, ed. R Z Bachrach 1989 Plenum, New York
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[25] Tian X Y, Zhao S L, Xu Z, Yao J F, Zhang F J, Jia Q J, Chen Y, Gong W, Fan X 2011 Acta Phys. Sin.60 027201 (in Chinese)[田雪雁、赵谡玲、徐 征、姚江峰、张福俊、贾全杰、陈 用、龚 伟、樊 星 2011 物理学报 60 027201]
[26] Kim D H, Park Y D, Jang Y, Yang H, Kim Y H, Han J I, Moon D G, Park S, Chang T, Chang C, Joo M, Ryu C Y 2005 Adv. Funct. Mater. 15 77
[27] Loo Y 2007 AIChE Journal 531066
[28] Kline R J, Mcgehee M D, Toney M F, 2006 Nature (London) 5 222
[29] Chang J F, Sun B, Breiby D W, Nielsen M M, Sölling T I, Giles M, McCulloch I, Sirringhaus H 2004 Chem. Mater. 16 4772
[30] Zen A, Pflaum J, Hirschmann S, Zhuang W, Jaiser F, Asawapirom U, Rabe R P, Scherf U, Neher D 2004 Adv. Funct. Mater. 14 757
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[1] Z Bao, J A Rogers, H E Katz 1999 J. Mater. Chem.9 1895
[2] Drury C J, Mutsaers C M J, Hart C M, Matters M, Leeuw D M de 1998 Appl. Phys. Lett. 73 108
[3] Kawase T, Shimoda T, Newsome C, Sirringhaus H, Friend R H 2003 Thin Solid Films 438 279
[4] Kawase T, Sirringhaus H, Friend R H, Shimoda T 2001 Adv. Mater. 13 1601
[5] Crone B K, Dodabalapur A, Sarpeshkar R, Filas R W, Lin Y Y, Bao Z, O'Neill J H, Li W, Katz H E 2001 J. Appl. Phys. 89 5125
[6] Steudel S, Myny K, Arkhipov V, Deibel C, Vusser S de, Genoe J, Heremans P 2005 Nat. Mater. 8 597
[7] Gundlach D J 2007 Nat. Mater. 6 173
[8] Chabinyc M L, Salleo A 2004 Chem. Mater. 16 4509
[9] Wisnieff R 1998 Nature (London) 394 225
[10] Yuan G C, Xu Z, Zhao S L, Zhang F J, Huang J Z, Huang J Y, Tian X Y, Xu X R 2008 Chin. Phys. B 17 3822
[11] Yuan G C, Xu Z, Zhao S L, Zhang F J, Jiang W W, Song D D, Zhu H N, Li S Y, Huang J Y, Huang H, Xu X R 2008 Chin. Phys. B 17 1887
[12] Bao Z, Dodabalapur A, Lovinger A J 1996 Appl. Phys. Lett. 69 4108
[13] Ong B S, Wu Y, Liu P, Gardner S 2004 J. Am. Chem. Soc. 126 3378
[14] Tian X Y, Xu Z, Zhao S L, Zhang F J, Xu X R, Yuan G C, Li J, Sun Q J 2010 Chin. Phys. B 19 018103
[15] Sirringhaus H 2009 Proceedings of the IEEE 97 1570
[16] Yang H, LeFevre S W, Ryu C Y, Bao Z 2007 Appl. Phys. Lett.90 172116
[17] Sirringhaus H, Brown P J, Friend R H, Nielsen M M, Bechgaard K, Langeveld-Voss B M W, Spiering A J H, Janssen R A J, Meijer E W, Herwig, P de Leeuw D M 1999 Nature (London) 401 685
[18] Lan Y K, Huang C 2008 J. Phys. Chem. B 112 14857
[19] Kline R J, McGehee M D, Toney M F 2006 Nature (London) 5 222
[20] Jiang X M, Jia Q J, Zheng W L, Liu Peng, Xi D C, Jiang Z M, Wang X 2000 High Energy Phys. And Nucl. Phys. 24 424 (in Chinese) [姜晓明、贾全杰、郑文莉、刘 鹏、冼鼎昌、蒋最敏、王 迅 2000高能物理与核物理 24 424]
[21] Cowley R A, Ryan T W 1987 J. Phys. D: Appl. Phys. 20 61
[22] Gay J M, Stocker P, Rhemore F 1993 J. Appl. Phys. 73 816
[23] Fuoss P H, Liang K S, Eisenberger P, ed. R Z Bachrach 1989 Plenum, New York
[24] Zhang J D, Mo Z S 2009 University Chem. 24 1(in Chinese) [张吉东、莫志深 2009大学化学24 1]
[25] Tian X Y, Zhao S L, Xu Z, Yao J F, Zhang F J, Jia Q J, Chen Y, Gong W, Fan X 2011 Acta Phys. Sin.60 027201 (in Chinese)[田雪雁、赵谡玲、徐 征、姚江峰、张福俊、贾全杰、陈 用、龚 伟、樊 星 2011 物理学报 60 027201]
[26] Kim D H, Park Y D, Jang Y, Yang H, Kim Y H, Han J I, Moon D G, Park S, Chang T, Chang C, Joo M, Ryu C Y 2005 Adv. Funct. Mater. 15 77
[27] Loo Y 2007 AIChE Journal 531066
[28] Kline R J, Mcgehee M D, Toney M F, 2006 Nature (London) 5 222
[29] Chang J F, Sun B, Breiby D W, Nielsen M M, Sölling T I, Giles M, McCulloch I, Sirringhaus H 2004 Chem. Mater. 16 4772
[30] Zen A, Pflaum J, Hirschmann S, Zhuang W, Jaiser F, Asawapirom U, Rabe R P, Scherf U, Neher D 2004 Adv. Funct. Mater. 14 757
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