Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET

Wang Guan-Yu; Zhang He-Ming; Wang Xiao-Yan; Wu Tie-Feng; Wang Bin

doi:10.7498/aps.60.077106

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Wang Guan-Yu, Zhang He-Ming, Wang Xiao-Yan, Wu Tie-Feng, Wang Bin. Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET. Acta Physica Sinica, 2011, 60(7): 077106. DOI: 10.7498/aps.60.077106

Citation:

Wang Guan-Yu, Zhang He-Ming, Wang Xiao-Yan, Wu Tie-Feng, Wang Bin. Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET. Acta Physica Sinica, 2011, 60(7): 077106. DOI: 10.7498/aps.60.077106

Citation:

Wang Guan-Yu, Zhang He-Ming, Wang Xiao-Yan, Wu Tie-Feng, Wang Bin. Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET. Acta Physica Sinica, 2011, 60(7): 077106. DOI: 10.7498/aps.60.077106