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An Al and Sb codoped ZnO nanorod ordered array thin film is deposited on a glass substrate with a ZnO seed layer by hydrothermal method. The XRD, SEM, TEM, and SAED results indicate that the thin film consists of nanorods growing in the direction vertical to the ZnO seed layer, and that the nanorods with an average diameter of 27.8 nm and length of 1.02 m consist of single crystalline wurtzite ZnO crystal growing along the [001] direction. Raman scattering analysis demonstrates that the Al and Sb codoped ZnO thin films with the concentrations of Al and Sb of 3.0 at%, 4.0 at%, 5.0 at%, 6.0 at% have Raman shifts of 3, 10, 14 and 12 cm-1 according to Raman shift 580 cm-1 of undoped ZnO nanorod thin film, respectively. Room temperature photoluminescence reveals that the emission intensity decreases at 545 nm and increases at 414 nm in ZnO film prepared by the codoping of Al and Sb. It is because the decrease of Oi and the increase of Zni are caused by the codoping of Al and Sb.
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Keywords:
- Al and Sb codoped ZnO thin film /
- ordered array nanorod /
- structure characterization /
- Raman scattering
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[59] -
[1] Wang D Y, Gao S X, Li G, Zhao M 2010 Acta Phys. Sin. 59 3473 (in Chinese) [王德义、高书霞、李 刚、赵 鸣 2010 物理学报 59 3473]
[2] [3] Cheng C W, Sie E J, Liu B, Huan C H A, Sum T C, Sun H D, Fan H J 2010 Appl. Phys. Lett. 96 071107
[4] [5] Gao L, Zhang J M 2010 Acta Phys. Sin. 59 1263 (in Chinese) [高 立、张建民 2010 物理学报 59 1263]
[6] Deng B, Sun H Q, Guo Z Y, Gao X Q 2010 Acta Phys. Sin. 59 1212 (in Chinese) [邓 贝、孙惠卿、郭志友、高小奇 2010 物理学报 59 1212]
[7] [8] [9] Yang Y, Qi J J, Liao Q L, Zhang Y, Yan X Q, Huang Y H, Tang L D 2009 Appl. Phys. A 94 799
[10] [11] Yamamoto T 2002 Thin Solid Films 420 100
[12] [13] Sui Y R, Yao B, Yang J H, Gao L L, Yang T, Deng R, Ding M, Zhao T T, Huang X M, Pan H L, Shen D Z 2010 J. Lumine. 130 1101
[14] [15] Wei S F, Lian J S, Wu H 2010 Mater. Charact. 61 1239
[16] [17] Fuge G M, Holmes T M S, Ashfold M N R 2009 Chem. Phys. Lett. 479 125
[18] Wu J J, Liu S C 2002 Adv. Mater. 14 215
[19] [20] [21] Koh Y W, Lin M, Tan C K, Foo Y L, Loh K P 2004 J. Phys. Chem. B 108 11419
[22] Song J J, Lim S W 2007 J. Phys. Chem. C 111 596
[23] [24] Chien C T, Wu M C, Chen C W, Yang H H, Wu J J, Su W F, Lin C S, Chen Y F 2008 Appl. Phys. Lett. 92 223102
[25] [26] [27] Han N, Wu X F, Chai L, Liu H D, Chen Q F 2010 Sensor Actuat. B: Chem. 150 230
[28] Rajalakshmi M, Arora Akhilesh K, Bendre B S, Shailaja M 2000 J. Appl. Phys. 87 2445
[29] [30] [31] Alim K A, Fonoberov V A, Balandin A A 2005 Appl. Phys. Lett. 86 053103
[32] [33] Du G T, Ma Y, Zhang Y T, Yang T P 2005 Appl. Phys. Lett. 87 213103
[34] [35] Permogorov S, Reznitsky A 1976 Solid State Commun. 18 781
[36] [37] Samanta K, Bhattacharya P, Katiyar R S 2010 J. Appl. Phys. 108 113501
[38] Kim H W, Kebede M A, Kim H S 2010 Current Appl. Phys. 10 60
[39] [40] Bundersmann C, Ashkenov N, Schubert M, Spenmann D, Butz T, Kaidashev E M, Lorenz M, Grundmann M 2003 Appl. Phys. Lett. 83 1974
[41] [42] [43] Srikant V, Clarke D R 1998 J. Appl. Phys. 83 5447
[44] Look D C, Hemsky J W, Sizelove J R 1999 Phys. Rev. Lett. 82 2552
[45] [46] [47] Lee M K, Tu H F 2007 J. Appl. Phys. 101 126103
[48] [49] Wei X Q, Man B Y, Liu M, Xue C S, Zhuang H Z, Yang C 2007 Physica B 388 145
[50] [51] Roro K T, Dangbegnon J K, Sivaraya S, Leitch A W R, Botha J R 2008 J. Appl. Phys. 103 053516
[52] Han N, Hu P, Zuo A H, Zhang D W, Tian Y J, Chen Y F 2010 Sensor Actuat. B: Chem. 145 114
[53] [54] Cheng W, Wu P, Zou X, Xiao T 2006 J. Appl. Phys. 100 054311
[55] [56] Borseth T M, Svensson B G, Kuznetsov A Y, Klason P, Zhao Q X, Willander M 2006 Appl. Phys. Lett. 89 262112
[57] [58] Studenikin S A, Golego N, Cocivera M 1998 J. Appl. Phys. 84 2287
[59]
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