Study of the grain size effects on electrical resistivity model for ultrathin (10-50 nm) Cu films

Wang Ning; Dong Gang; Yang Yin-Tang; Chen Bin; Wang Feng-Juan; Zhang Yan

doi:10.7498/aps.61.016802

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Wang Ning, Dong Gang, Yang Yin-Tang, Chen Bin, Wang Feng-Juan, Zhang Yan. Study of the grain size effects on electrical resistivity model for ultrathin (10-50 nm) Cu films. Acta Physica Sinica, 2012, 61(1): 016802. DOI: 10.7498/aps.61.016802

Citation:

Wang Ning, Dong Gang, Yang Yin-Tang, Chen Bin, Wang Feng-Juan, Zhang Yan. Study of the grain size effects on electrical resistivity model for ultrathin (10-50 nm) Cu films. Acta Physica Sinica, 2012, 61(1): 016802. DOI: 10.7498/aps.61.016802

Citation:

Wang Ning, Dong Gang, Yang Yin-Tang, Chen Bin, Wang Feng-Juan, Zhang Yan. Study of the grain size effects on electrical resistivity model for ultrathin (10-50 nm) Cu films. Acta Physica Sinica, 2012, 61(1): 016802. DOI: 10.7498/aps.61.016802