Theoretical study of linewidth enhancement factor of InGaAs/GaAs strained quantum well lasers

Zhang Fan; Li Lin; Ma Xiao-Hui; Li Zhan-Guo; Sui Qing-Xue; Gao Xin; Qu Yi; Bo Bao-Xue; Liu Guo-Jun

doi:10.7498/aps.61.054209

Abstract

A simple model of calculating the linewidth enhancement factor ( factor) is presented by introducing the correlative theory and its conversion formula of the factor in detail. The contributions of interband transition, free carrier absorption and band gap narrowing to the factor are taken into account. Carrier concentration and differential gain dependence of photon energy are obtained from the gain curves for different carrier concentrations. The gain curves and the factor of InGaAs/GaAs quantum well are simulated, separately, and the results accord well with those reported in the literature. Subsequently discussed are two important parameters of InGaAs/GaAs quantum well laser containing quantum well width and In mole fraction. The results show that the increase of two parameters leads the factor to increase.

Keywords:

Authors and contacts

1.
National Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China;
2.
The Changchun Regional Office of the Armored Forces Representative Bureau, the Equipment Headquarters of the P.L.A., Changchun 130103, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976038, 61006039) and the National Key Laboratory of High Power Semiconductor Lasers Foundation of China (Grant No. 010602).

References

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[17]	Miloszewski J M, Wartak M S, Weetman P, Hess O 2009 J. Appl.Phys. 106 063102
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[19]	Joachim P 2003 Semiconductor Optoelectronic Devices (California:Academic Press) pp7,94
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[22]	Shun L C 1991 Phys. Rev. B 43 9649
[23]	Martin G, Botchkarev A, Rockett A, Morkoc H 1996 Appl. Phys.Lett. 68 2541
[24]	Huang D X 1994 Semiconductor Optoelectronics (Chengdu: Pressof University of Electric Science and Technology of China) p207(in Chinese) [黄德修1994半导体光电子学(成都:电子科技大学出版社) 第207页]
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Cited By

[1]	Govind P A, Charles M B 1993 Photon. Technol. Lett. 5 640
[2]	Henry C H 1982 Quantum Electron 18 259
[3]	Yu Y G, Yan Y X 2006 Laser & Infrared 36 114 (in Chinese) [禹延光, 闫艳霞 2006 激光与红外 36 114]
[4]	Song Z X, Yu Y G, Ye H Y, Zhang X 2008 Study on Optical Communications2 60 (in Chinese) [宋兆欣, 禹延光, 叶会英, 张旭 2008 光通信研究 2 60]
[5]	Seo W H, Donegan J F 2003 Appl. Phys. Lett. 82 505
[6]	Schlichenmaier C, Koch S W, Chow W W 2002 Appl. Phys. Lett.81 2944
[7]	Rodriguez D, Borruel L, Esquivias I, Wenzel H, Sumpf B, ErbertG 2004 Photon. Technol. Lett. 16 1432
[8]	Gan K G, Bowers J E 2004 Photon. Technol. Lett. 16 1256
[9]	MacKenzie R, Lim J J, Bull S, Chao S, Sujecki S, Sadeghi M,Wang S M, Larsson A, Melanen P, Sipila P, Uusimaa P, Larkins EC 2007 IET Optoelectron 1 284
[10]	Vahala K, Chiu L C, Margalit S, Yariv A 1983 Appl. Phys. Lett.43 631
[11]	Kano F, Yamanaka T, Yamamoto N, Yoshikuni Y, Mawatari H,Tohmori Y, Yamamoto M, Yokoyama K 1993 J. Quantum Electronics29 1553
[12]	Lee S S, Figueroal L, Ramaswamy R 1989 J. Quantum Electronics25 862
[13]	Park S H 2007 J. Korean Phys. Soc. 51 2077
[14]	Villafranca A, Villafranca A, Giuliani G, Garces I 2009 Photon.Technol. Lett. 21 1256
[15]	Du B X 2004 Principle of Semiconductor Lasers (Beijing: EngineryIndustry Press) (in Chinese) [杜宝勋 2004 半导体激光器原理(北京: 兵器工业出版社)]
[16]	Gerhardt N C, Hofmann M R, Hader J, Moloney J V, Koch S W, Riechert H 2004 Appl. Phys. Lett. 84 1
[17]	Miloszewski J M, Wartak M S, Weetman P, Hess O 2009 J. Appl.Phys. 106 063102
[18]	Qiyuan M M (Translated by Zhou N S) 2002 The Fundation ofSemiconductor Lasers (Beijing: Science Press) p47 (in Chinese) [栖原敏明著, 周南生译 2002 半导体激光器基础 (北京:科学出版社)第47页]
[19]	Joachim P 2003 Semiconductor Optoelectronic Devices (California:Academic Press) pp7,94
[20]	Hua L L, Song Y R, Zhang P, Zhang X, Guo K 2010 Acta Opt.Sin. 30 1702 (in Chinese) [华玲玲, 宋晏蓉, 张鹏, 张晓, 郭凯 2010 光学学报 30 1702
[21]	Xu G Y, Li A Z 2004 Acta Phys. Sin. 53 218 (in Chinese) [徐刚毅, 李爱珍 2004 物理学报 53 218]
[22]	Shun L C 1991 Phys. Rev. B 43 9649
[23]	Martin G, Botchkarev A, Rockett A, Morkoc H 1996 Appl. Phys.Lett. 68 2541
[24]	Huang D X 1994 Semiconductor Optoelectronics (Chengdu: Pressof University of Electric Science and Technology of China) p207(in Chinese) [黄德修1994半导体光电子学(成都:电子科技大学出版社) 第207页]
[25]	Xin G F, Chen G Y, Hua J Z, Zhao R, Kang Z L, Feng R Z, An ZF 2004 Acta Phys.Sin. 53 1293(in Chinese) [辛国锋, 陈国鹰, 花吉珍, 赵润, 康志龙, 冯荣珠, 安振峰 2004 物理学报 53 1293]
[26]	Gai H X, Li J J, Han J, Xing Y H, Deng J, Yu B, Shen G D, ChenJ X 2005 Chin. J. Quantum Electronics 22 85 (in Chinese) [盖红星, 李建军, 韩军, 邢艳辉, 邓军, 俞波, 沈光地, 陈建新 2005 量子电子学报 22 85]

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Vol. 61, Issue 5 - 2012-03-05

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