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The novel electron trapping material of Sr2SnO4: Tb3+, Li+ for optical storage is synthesized by the solid state method. Stimulated by 980 nm infrared laser, the material shows intense up-conversion photostimulated luminescence. The ultraviolet light at 292 nm is an optimal writing source. The material has less shallow traps, which corresponds to its weak afterglow (less than 500 s). On the other hand, this material has lots of deep traps. Thus, the Sr2SnO4:Tb3 +, Li+ is a promising optical storage material. In addition, we propose the optical storage luminescence mechanism of Sr2SnO4:Tb3 +, Li +.
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Keywords:
- Sr2SnO4: Tb3 + /
- Li+ /
- photostimulated luminescence /
- optical storage
[1] Johnson E J, Kafalas J, Dyes W A 1982 Appl. Phys. Lett. 40 993
[2] Cho Y, Kim D S, Choe B, Lim H, Kim D 1997 Phys. Rev. B 56 R4375
[3] Zhang Y, Wang B, Liu X, Xiao M 2010 J. Appl. Phys. 107 103502
[4] Gong X, Chen W J 1998 Appl. Phys. Lett. 73 2875
[5] Yamashita S A,Ogawa N 1989 Phys.Status. Solidi B 118 89
[6] Matsuzawa T, Aoki Y, Takeuchi N, Maruyama Y 1996 J. Electrochem. Soc. 143 2670
[7] Kang C, Liu R, Chang J, Lee B 2003 Chem. Mater. 15 3966
[8] Lei B, Li B, Zhang H, Li W 2007 Opt. Mater. 29 1491
[9] Wang J X, Xie S S, Yuan H J, Yan X Q, Liu D F, Gao Y, Zhou Z P, Song L, Liu L F, Zhao X W, Dou X Y, Zhou W Y, Wang G 2004 Solid State Commun. 131 435
[10] Wang J X, Xie S S, Gao Y, Yan X Q, Liu D F, Yuan H J, Zhou Z P, Song L, Liu L F, Zhou W Y, Wang G 2004 J. Cryst. Growth. 267 177
[11] Zhang J C, Yu M H, Qin Q S 2010 J. Appl. Phys. 108 123518
[12] Zhang J C, Wang Y H, Zhang Z Y, Xie P, Li H H, Jiang Y P 2008 Chin. Lett. 25 1453
[13] Liao J S, Liu B, Lai H S 2009 J.Lumin. 129 668
[14] Yu M, Lin J, Fu J, Zhang H J, Han Y C 2003 J.Mater.Chem. 13 1413
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[1] Johnson E J, Kafalas J, Dyes W A 1982 Appl. Phys. Lett. 40 993
[2] Cho Y, Kim D S, Choe B, Lim H, Kim D 1997 Phys. Rev. B 56 R4375
[3] Zhang Y, Wang B, Liu X, Xiao M 2010 J. Appl. Phys. 107 103502
[4] Gong X, Chen W J 1998 Appl. Phys. Lett. 73 2875
[5] Yamashita S A,Ogawa N 1989 Phys.Status. Solidi B 118 89
[6] Matsuzawa T, Aoki Y, Takeuchi N, Maruyama Y 1996 J. Electrochem. Soc. 143 2670
[7] Kang C, Liu R, Chang J, Lee B 2003 Chem. Mater. 15 3966
[8] Lei B, Li B, Zhang H, Li W 2007 Opt. Mater. 29 1491
[9] Wang J X, Xie S S, Yuan H J, Yan X Q, Liu D F, Gao Y, Zhou Z P, Song L, Liu L F, Zhao X W, Dou X Y, Zhou W Y, Wang G 2004 Solid State Commun. 131 435
[10] Wang J X, Xie S S, Gao Y, Yan X Q, Liu D F, Yuan H J, Zhou Z P, Song L, Liu L F, Zhou W Y, Wang G 2004 J. Cryst. Growth. 267 177
[11] Zhang J C, Yu M H, Qin Q S 2010 J. Appl. Phys. 108 123518
[12] Zhang J C, Wang Y H, Zhang Z Y, Xie P, Li H H, Jiang Y P 2008 Chin. Lett. 25 1453
[13] Liao J S, Liu B, Lai H S 2009 J.Lumin. 129 668
[14] Yu M, Lin J, Fu J, Zhang H J, Han Y C 2003 J.Mater.Chem. 13 1413
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