Analytical model of single event crosstalk in near space

Liu Bao-Jun; Cai Li

doi:10.7498/aps.61.196103

Abstract

With feature size scaling down, the influence of crosstalk on single event effect becomes more important. In order to analytically describe the influence of crosstalk effect on single event transient (SET), based on the equivalent circuits of SET and 6-node template model for interconnects, by using defined four rules of point admittance to simplify the calculation, the analytical model for single event crosstalk (SEC) is deduced. Through differentiating and Taylor series expansion theorem, the expression for the peak value of crosstalk voltage is achieved. The simulation results show that the analytical model is well consistent with SPICE circuits and average relative error is 2.51%, and max error is 5.11%.

Keywords:

Authors and contacts

Liu Bao-Jun,
Cai Li

1.
Science Institute, Air Force Engineering University, Xi' An 710051, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61172043), and the Key Program of Shaanxi Provincial Natural Science for Basic Research , China (Grant No. 2011JZ015).

References

[1]	Cai M H, Hai J W, Li X Y, Li H W, Zhang Z L 2009 Acta Phys. Sin. 58 6659 (in Chinese) [蔡明辉, 韩建伟, 李小银, 李宏伟, 张振力 2009物理学报 58 6659 ]
[2]	Zheng B, Ren Q H, Liu Y J, Chu Z Y, Zhao F 2007 IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications 2007 p769
[3]	Appleton E 1964 Elec. Power 5 140
[4]	Wang L 2010 Telecommunic. Engineer. 50 127 [王丽 2010 电讯技术 50 127]
[5]	Sayil S, Akkur A B, Gaspard III N 2009 Microelec. J. 40 1000
[6]	Sayil S, Rudrapati M S, Borra U K 2007 IEEE Reg. 5 Tech. Confer., Fayetteville, AR, 2007 p239
[7]	Liu X, Ma G, Shao J, Yang Z, Wang G 2009 Microelec. Reliab. 49 170
[8]	Fan C P, Fang C H 2011 Integ. 44 75
[9]	Sayil S, Boorla V K, Yeddula S R 2011 IEEE Trans. Nulc. Sci. 58 2493
[10]	Li D, David B, Pinaki M 2003 IEEE Trans. Comput.-Aided Des. Integ. Cir. Sys. 22 627
[11]	Lorival J E, Deschacht D 2010 Microelec. J. 41 474
[12]	Kaushik B K, Rajendra S S, Agarwal P, Joshi R C 2010 Microelec. J. 41 85
[13]	WirthG I, Vieira M G, Neto E H, Kastensmidt F L 2008 Microelec. Reliab. 48 29
[14]	Liu Z, Sun Y J, Li S Q, Liang B 2007 J. Semiconduct. 28 138 (in Chinese) [刘征, 孙永节, 李少青, 梁斌 2007 半导体学报 28 138]

Cited By

[1]	Cai M H, Hai J W, Li X Y, Li H W, Zhang Z L 2009 Acta Phys. Sin. 58 6659 (in Chinese) [蔡明辉, 韩建伟, 李小银, 李宏伟, 张振力 2009物理学报 58 6659 ]
[2]	Zheng B, Ren Q H, Liu Y J, Chu Z Y, Zhao F 2007 IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications 2007 p769
[3]	Appleton E 1964 Elec. Power 5 140
[4]	Wang L 2010 Telecommunic. Engineer. 50 127 [王丽 2010 电讯技术 50 127]
[5]	Sayil S, Akkur A B, Gaspard III N 2009 Microelec. J. 40 1000
[6]	Sayil S, Rudrapati M S, Borra U K 2007 IEEE Reg. 5 Tech. Confer., Fayetteville, AR, 2007 p239
[7]	Liu X, Ma G, Shao J, Yang Z, Wang G 2009 Microelec. Reliab. 49 170
[8]	Fan C P, Fang C H 2011 Integ. 44 75
[9]	Sayil S, Boorla V K, Yeddula S R 2011 IEEE Trans. Nulc. Sci. 58 2493
[10]	Li D, David B, Pinaki M 2003 IEEE Trans. Comput.-Aided Des. Integ. Cir. Sys. 22 627
[11]	Lorival J E, Deschacht D 2010 Microelec. J. 41 474
[12]	Kaushik B K, Rajendra S S, Agarwal P, Joshi R C 2010 Microelec. J. 41 85
[13]	WirthG I, Vieira M G, Neto E H, Kastensmidt F L 2008 Microelec. Reliab. 48 29
[14]	Liu Z, Sun Y J, Li S Q, Liang B 2007 J. Semiconduct. 28 138 (in Chinese) [刘征, 孙永节, 李少青, 梁斌 2007 半导体学报 28 138]

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