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The effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon epitaxial wafer is systematically investigated by optical microscopy. The samples first experience the rapid thermal processing (RTP) in different atmospheres, and then are Cu-contaminated at different temperatures. It is found that RTP in O2 ambient leads to a low density of copper precipitation in the p+ substrate, however, high density of copper precipitation is observed in the sample subjected to RTP in Ar or N2 ambient. Additionally, in all of the samples, no defects are found in the epitaxial layer. On the basis of the experiments, it can be concluded that interstitial silicon will prevent the process of copper precipitation while vacancy has an opposite effect. Furthermore, p/p+ epitaxial structure could absorb copper impurities, thereby keeping the epitaxial layer free of defect.
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Keywords:
- point defects /
- heavily boron-doped /
- silicon epitaxial wafer /
- copper precipitation
[1] Toshinori T, Huang X M, Masayoshi K, Tomio K, Tatsuo F, Keigo H 1999 Jpn. J. Appl. Phys. 38 223
[2] Shimura F, Willardson R K, Beer A C, Weber E R 1994 Oxygen in Silicon, Series: Semiconductors and Semimetals (Vol. 42) (Boston, MA: Academic Press) p 41
[3] Xu J, Li F L, Yang D R 2007 Acta Phys. Sin. 56 4113 (in Chinese) [徐进, 李福龙, 杨德仁2007 物理学报 56 4113]
[4] Cui C, Ma X Y, Yang D R 2008 Acta Phys. Sin. 57 1037 (in Chinese) [崔灿, 马向阳, 杨德仁2008 物理学报 57 1037]
[5] Li C L, Ma X Y, Xu J, Yu X G, Yang D R, Que D L 2003 Jpn. J. Appl. Phys. 42 7290
[6] Xi Z Q, Yang D R, Xu J, Ji Y J, Que D L, Moeller H J 2003 Appl. Phys. Lett. 83 3048
[7] Istratov A A , Weber E R 1998 Appl Phys. A 66 123
[8] Xu J, Yang D R, Moeller H J 2007 J. Appl. Phys. 102 114506
[9] Pagani M, Falster R J, Fisher G R, Ferrero G C, Olmo M 1997 Appl. Phys. Lett. 70 1572
[10] Vorokov V V, Falster R 2002 J. Electrochem. Soc. 149 167
[11] Xu J, Wang W Q, Yang D R, Moeller H J 2008 J. Alloys Compd. 478 758
[12] Andrei A, Istratov A A, Weber E R 2002 J. Electrochem Soc. 149 21
[13] McHugo S A, Mohammed A, Thompson A C, Lai B, Cai Z 2002 J. Appl. Phys. 91 6396
[14] Xu J, Wang Y Z, Yang D R, Moeller H J 2010 J. Alloys Compd. 502 351
[15] Xi Z Q, Yang D R, Chen J, Xu J, Ji Y J, Que D L, Moeller H J 2004 Semicond. Sci. Technol. 19 299
[16] Shen B, Jablonski J, Sekeguchi T, Sumino K 1996 Jpn. J. Appl. Phys. 35 4187
[17] Borghesi A, Pivac B, Sassella A, Stella A 1995 J. Appl. Phys. 77 4169
[18] Akhmetov V, Kissinger G, von Ammon W 2009 Physica B 404 4572
[19] Xu J, Yang D R, Chu J 2004 Acta Phys. Sin. 53 550 (in Chinese) [徐进, 杨德仁, 储佳2004 物理学报 53 550]
[20] McHugo S A, Flink C 2000 Appl. Phys. Lett. 77 3598
[21] Kola R R, Rozgonyi G A, Li J, Rogers W B, Tan T Y, Bean K E, Lindberg K 1989 Appl. Phys. Lett. 55 2108
[22] Wang Y Z, Xu J, Wang N T, Ji C, Zhang G C 2012 Acta Phys. Sin. 61 016105 (in Chinese) [王永志, 徐进, 王娜婷, 吉川, 张光超 2012 物理学报 61 016105]
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[1] Toshinori T, Huang X M, Masayoshi K, Tomio K, Tatsuo F, Keigo H 1999 Jpn. J. Appl. Phys. 38 223
[2] Shimura F, Willardson R K, Beer A C, Weber E R 1994 Oxygen in Silicon, Series: Semiconductors and Semimetals (Vol. 42) (Boston, MA: Academic Press) p 41
[3] Xu J, Li F L, Yang D R 2007 Acta Phys. Sin. 56 4113 (in Chinese) [徐进, 李福龙, 杨德仁2007 物理学报 56 4113]
[4] Cui C, Ma X Y, Yang D R 2008 Acta Phys. Sin. 57 1037 (in Chinese) [崔灿, 马向阳, 杨德仁2008 物理学报 57 1037]
[5] Li C L, Ma X Y, Xu J, Yu X G, Yang D R, Que D L 2003 Jpn. J. Appl. Phys. 42 7290
[6] Xi Z Q, Yang D R, Xu J, Ji Y J, Que D L, Moeller H J 2003 Appl. Phys. Lett. 83 3048
[7] Istratov A A , Weber E R 1998 Appl Phys. A 66 123
[8] Xu J, Yang D R, Moeller H J 2007 J. Appl. Phys. 102 114506
[9] Pagani M, Falster R J, Fisher G R, Ferrero G C, Olmo M 1997 Appl. Phys. Lett. 70 1572
[10] Vorokov V V, Falster R 2002 J. Electrochem. Soc. 149 167
[11] Xu J, Wang W Q, Yang D R, Moeller H J 2008 J. Alloys Compd. 478 758
[12] Andrei A, Istratov A A, Weber E R 2002 J. Electrochem Soc. 149 21
[13] McHugo S A, Mohammed A, Thompson A C, Lai B, Cai Z 2002 J. Appl. Phys. 91 6396
[14] Xu J, Wang Y Z, Yang D R, Moeller H J 2010 J. Alloys Compd. 502 351
[15] Xi Z Q, Yang D R, Chen J, Xu J, Ji Y J, Que D L, Moeller H J 2004 Semicond. Sci. Technol. 19 299
[16] Shen B, Jablonski J, Sekeguchi T, Sumino K 1996 Jpn. J. Appl. Phys. 35 4187
[17] Borghesi A, Pivac B, Sassella A, Stella A 1995 J. Appl. Phys. 77 4169
[18] Akhmetov V, Kissinger G, von Ammon W 2009 Physica B 404 4572
[19] Xu J, Yang D R, Chu J 2004 Acta Phys. Sin. 53 550 (in Chinese) [徐进, 杨德仁, 储佳2004 物理学报 53 550]
[20] McHugo S A, Flink C 2000 Appl. Phys. Lett. 77 3598
[21] Kola R R, Rozgonyi G A, Li J, Rogers W B, Tan T Y, Bean K E, Lindberg K 1989 Appl. Phys. Lett. 55 2108
[22] Wang Y Z, Xu J, Wang N T, Ji C, Zhang G C 2012 Acta Phys. Sin. 61 016105 (in Chinese) [王永志, 徐进, 王娜婷, 吉川, 张光超 2012 物理学报 61 016105]
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