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中国物理学会期刊
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Zhang Bin, Yang Yin-Tang, Li Yue-Jin, Xu Xiao-Bo. Electrical behavior research of silicon-on-insulator SiGe heterojunction bipolar transistorJ. Acta Physica Sinica, 2012, 61(23): 238502. DOI: 10.7498/aps.61.238502
Citation: Zhang Bin, Yang Yin-Tang, Li Yue-Jin, Xu Xiao-Bo. Electrical behavior research of silicon-on-insulator SiGe heterojunction bipolar transistorJ. Acta Physica Sinica, 2012, 61(23): 238502. DOI: 10.7498/aps.61.238502
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Electrical behavior research of silicon-on-insulator SiGe heterojunction bipolar transistor

Acta Phys. Sin., 2012, 61(23): 238502.
DOI: 10.7498/aps.61.238502
CSTR: 32037.14.aps.61.238502
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